A new technical paper titled “Resolution enhancement for high-numerical aperture extreme ultraviolet lithography by split pupil exposures: a modeling perspective” was published by researchers at Fraunhofer IISB and ASML.
The open source paper published on SPIE states:
“The lithographic imaging performance of extreme ultraviolet (EUV) lithography is limited by the efficiency of light diffraction and contrast fading caused by 3D mask effects. The dual monopole concept has been proposed by Joern-Holger Franke to mitigate contrast fading for line-space (L/S) patterns. We employ various modeling techniques to investigate the extendibility of dual monopole or split pupil exposures (SPs) to dense arrays of contacts on dark field and light field masks using different mask absorber options.”
Find the technical paper here. Published October 2024.
Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Tim Brunner, Eelco van Setten, M.-Claire van Lare, Mark van de Kerkhof, “Resolution enhancement for high-numerical aperture extreme ultraviolet lithography by split pupil exposures: a modeling perspective,” J. Micro/Nanopattern. Mats. Metro. 24(1) 011002 (8 October 2024) https://doi.org/10.1117/1.JMM.24.1.011002.
Leave a Reply