Improvement Of Dopant Concentration Control With Acoustic Control System For B-SiGe Epitaxy Deposition

How to improve deposition tool availability for mass production.


Currently, SiGe-B epitaxy is a leading technology to induce strain in PMOS channel and improve the hole mobility to achieve better device performance. In practice, we observe that the device performance strongly depends on the dopant concentration, especially boron concentration. It is shown that the Acoustic Control System [ACS] is able to actively respond to instantaneous variations of incoming gas and achieve better dopant control. In this paper, we report reduction of boron concentration variation using ACS technology for SiGe-B epitaxy.

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