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Improvement Of Dopant Concentration Control With Acoustic Control System For B-SiGe Epitaxy Deposition


Currently, SiGe-B epitaxy is a leading technology to induce strain in PMOS channel and improve the hole mobility to achieve better device performance. In practice, we observe that the device performance strongly depends on the dopant concentration, especially boron concentration. It is shown that the Acoustic Control System [ACS] is able to actively respond to instantaneous variations of incomi... » read more