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The Effects Of Poly Corner Etch Residue On Advanced FinFET Device Performance


In this paper, we study the effect of poly corner residue during a 5nm FinFET poly etch process using virtual fabrication. A systemic investigation was performed to understand the impact of poly corner residue on hard failure modes and device performance. Our results indicate that larger width and height residues can lead to a hard failure by creating a short between the source/drain epitaxy an... » read more

200mm Demand Surges


A surge in demand for various chips is causing shortages for select 200mm foundry capacity as well as 200mm fab equipment, and it shows no signs of abating in 2021. Foundry customers will face a shortfall of 200mm capacity at select foundries at least in the first half of 2021, and perhaps beyond. Those customers will need to plan ahead to ensure they obtain enough 200mm capacity in 2021. Ot... » read more

Improvement Of Dopant Concentration Control With Acoustic Control System For B-SiGe Epitaxy Deposition


Currently, SiGe-B epitaxy is a leading technology to induce strain in PMOS channel and improve the hole mobility to achieve better device performance. In practice, we observe that the device performance strongly depends on the dopant concentration, especially boron concentration. It is shown that the Acoustic Control System [ACS] is able to actively respond to instantaneous variations of incomi... » read more

Inspection, Metrology Challenges Grow For SiC


Inspection and metrology are becoming more critical in the silicon carbide (SiC) industry amid a pressing need to find problematic defects in current and future SiC devices. Finding defects always has been a challenging task for SiC devices. But it’s becoming more imperative to find killer defects and reduce them as SiC device vendors begin to expand their production for the next wave of a... » read more

MicroLEDs: The Next Revolution In Displays?


Flat-panel display technology is exploding on several fronts as more screens are required for more devices. But one type of display is generating an enormous amount of buzz in the market—microLEDs. Dozens of companies are working on micro-light emitting diodes (microLEDs), a technology that promises to provide better and brighter displays than current solutions in the market. Apple, Facebo... » read more

Mixed Outlook For Silicon Wafer Biz


After a period of record growth, the silicon wafer industry is off to a slow start in 2019 and facing a mixed outlook. Generally, 200mm silicon wafer supply remains tight. But demand for 300mm silicon wafers is cooling off in some segments, causing supply to move toward equilibrium after a period of shortages. On average, though, silicon wafer prices continue to rise despite the slowdown. ... » read more

Variation At 10/7nm


Klaus Schuegraf, vice president of new products and solutions at PDF Solutions, explains why variability is a growing challenge at advanced nodes, why middle of line is now one of the big problem areas, and what happens when a via is misaligned due to a small process variation. https://youtu.be/jQfggOnxZJQ » read more

Where Is Selective Deposition?


For years, the industry has been working on an advanced technology called area-selective deposition for chip production at 5nm and beyond. Area-selective deposition, an advanced self-aligned patterning technique, is still in R&D amid a slew of challenges with the technology. But the more advanced forms of technology are beginning to make some progress, possibly inching closer from the la... » read more

More Lithography/Mask Challenges (Part 2)


Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

Tech Talk: 5/3nm Parasitics


Ralph Iverson, principal R&D engineer at Synopsys, talks about parasitic extraction at 5/3nm and what to expect with new materials and gate structures such as gate-all-around FETs and vertical nanowire FETs. https://youtu.be/24C6byQBkuI » read more

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