More Lithography Options?


Lithographers face some tough decisions at 10nm and beyond. At these nodes, IC makers are still weighing the various patterning options. And to make it even more difficult, lithographers could soon have some new, and potentially disruptive, options on the table. On one front, the traditional next-generation lithography (NGL) technologies are finally making some noticeable progress. For examp... » read more

How To Deal With Electromigration


The replacement of aluminum with copper interconnect wiring, first demonstrated by IBM in 1997, brought the integrated circuit industry substantial improvements in both resistance to electromigration and line conductivity. Copper is both a better and more stable conductor than aluminum. Difficult though the transition was, it helped extend device scaling for another eighteen years (and counting... » read more

The Week In Review: Manufacturing


At the SPIE Advanced Lithography conference in San Jose, Calif., there were several takeaways. First, the battle for lithography share is heating up at Intel. “We believe Nikon still holds a decent position at Intel, but with ASML gaining some share at 10nm. Nikon could regain some share with its new platform at 7nm, in our view, but it is early to tell. We believe Nikon has improved its posi... » read more

Manufacturing Bits: Feb. 24


EUV progress report At the SPIE Advanced Lithography conference in San Jose, Calif., ASML Holding said that one customer, Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC), has exposed more than 1,000 wafers on an NXE:3300B EUV system in a single day. This is one step towards the insertion of EUV lithography in volume production. During a recent test run on the system, TSMC exposed 1,022 w... » read more

The Week In Review: Manufacturing


For years, chipmakers have attempted to build fabs in India. So far, however, India has failed to set up modern fabs and for good reason. There are issues in terms of obtaining dependable power and water for a fab in India, according to Will Strauss, president of Forward Concepts, who added that India also suffers from government bureaucracy. India is still trying. Last week, Cricket Semicon... » read more

3D NAND Market Heats Up


After some delays and uncertainty in past years, the 3D NAND market is finally heating up. In 2013 and 2014, Samsung was the only vendor participating in the 3D NAND market. Most other suppliers were supposed to ship 3D NAND devices in volumes last year, but vendors pushed out their production dates for various business and technical reasons. Going into 2015, [getentity id="22865" e_nam... » read more

Still Waiting For III-V Chips


For years, chipmakers have been searching for an alternative material to replace traditional silicon in the channel for advanced CMOS devices at 7nm and beyond. There’s a good reason, too: At 7nm, silicon will likely run out of steam in the channel. Until recently, chipmakers were counting on III-V materials for the channels, at least for NFET. Compared to silicon, III-V materials provide ... » read more

The Week In Review: Manufacturing


First Solar announced that Apple has committed $848 million for clean energy from First Solar’s California Flats Solar Project in Monterey County, Calif. Apple will receive electricity from 130 megawatts (MW) AC of the solar project under a 25-year power purchase agreement (PPA), the largest agreement in the industry to provide clean energy to a commercial end user. Applied Materials repor... » read more

The Week In Review: Manufacturing


This week, IBM began to cut jobs amid lackluster results. Big Blue is also in the process of selling its chip unit to GlobalFoundries. GlobalFoundries said the jobs are safe at IBM Micro, at least for now, according to a report the Press and Sun-Bulletin. What’s the latest with Applied Materials’ proposed acquisition with Tokyo Electron Ltd. (TEL)? “Germany, Israel and Singapore approv... » read more

Next Channel Materials?


Chipmakers are making a giant leap from planar transistors to [getkc id="185" kc_name="finFETs"]. Initially, [getentity id="22846" e_name="Intel"] moved into finFET production at 22nm and is now ramping up its second-generation finFETs at 14nm. And the other foundries will enter the finFET fray at 16nm/14nm. So what’s next? Chipmakers will likely extend the finFET architecture to both 10nm... » read more

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