A new technical paper titled “Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review” by researchers at PKU-HKUST Shenzhen-Hong Kong Institution and Shenzhen Institute of Peking University.
“The novel device structure of negative capacitance gate all around field effect transistor (NC GAA-FET) can combine both the advantages of GAA-FET and NC-FET, and is the most promising ultra-low power consumption device and promises to sustain the Moore’s law further beyond what is predicted now,” states the paper.
Find the open access technical paper here. Published Feb. 2023.
L. Qin et al., “Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review,” in IEEE Access, vol. 11, pp. 14028-14042, 2023, doi: 10.1109/ACCESS.2023.3243697.
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