A new technical paper titled "Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review" by researchers at PKU-HKUST Shenzhen-Hong Kong Institution and Shenzhen Institute of Peking University.
"The novel device structure of negative capacitance gate all around field effect transistor (NC GAA-FET) can combine both the advantages of GAA-FET and NC-FET, and ...
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