tag: 10nm

BEOL Barricades Ahead
By David Fried - 15 Dec, 2016 - Comments: 0

Coventor recently assembled an expert panel at IEDM 2016, to discuss changes to BEOL process technology that would be needed to continue dimensional scaling to 7 nm and lower. Among the questions posed to panelists: What is BEOL? Where does it begin and end? Are there fundamental limits to interconnect processes? How much longer can we continue to use current interconnect processes and ... » read more

Fab Tool Biz Faces Challenges In 2017
By Mark LaPedus - 15 Dec, 2016 - Comments: 3

After experiencing a gradual recovery and positive growth in 2016, the semiconductor equipment industry sees a mixed picture as well as some uncertainty in 2017. In the near term, though, business is robust. Several chipmakers started to place a sizeable number of fab tool orders in the latter part of 2016, particularly in three areas—3D NAND, logic and foundry. Now, after buying the in... » read more

Timing Closure Issues Resurface
By Ed Sperling - 07 Dec, 2016 - Comments: 1

Timing closure has resurfaced as a major challenge at 10nm and 7nm due to more features and power modes, increased process variation and other manufacturing-related issues. While timing-related problems are roughly correlated to rising complexity in semiconductors, they tend to generate problems in waves—about once per decade. In SoCs, timing closure problems have spawned entire methodolog... » read more

Multi-Patterning Issues At 7nm, 5nm
By Ed Sperling - 28 Nov, 2016 - Comments: 13

Continuing to rely on 193nm immersion lithography with multiple patterning is becoming much more difficult at 7nm and 5nm. With the help of various resolution enhancement techniques, optical lithography using a deep ultraviolet excimer laser has been the workhorse patterning technology in the fab since the early 1980s. It is so closely tied with the continuation of [getkc id="74" comment="Mo... » read more

And The Award Goes To…
By Brian Bailey - 22 Nov, 2016 - Comments: 0

I like to look at what users find the most interesting topics, not because it directly influences what I write, but to get a sense of the subjects that are on most people's minds. Some of it comes as no surprise. Content about new fabrication technologies tends to blow everything else away. While it directly affects very few of us, I think we all want to know the general direction of the indust... » read more

Overcoming The Limits Of Scaling
By Ed Sperling - 27 Oct, 2016 - Comments: 0

Semiconductor Engineering sat down to discuss the increasing reliance on architectural choices for improvements in power, performance and area, with [getperson id="11425" comment=" Sundari Mitra"], CEO of [getentity id="22535" comment="NetSpeed Systems"]; Charlie Janac, chairman and CEO of [getentity id="22674" e_name="Arteris"]; [getperson id="11032" comment="Simon Davidmann"] CEO of [getentit... » read more

How Many Nanometers?
By Ed Sperling - 20 Oct, 2016 - Comments: 0

What’s the difference between a 10nm and a 7nm chip? That should be a straightforward question. Math, after all, is the only pure science. But as it turns out, the answer is hardly science—even if it is all about numbers. Put in perspective, at 65nm, companies defined the process node by the half pitch of the first metal layer. At 40/45nm, with the cost and difficulty of developing n... » read more

To 10nm And Beyond
By Mark LaPedus - 20 Oct, 2016 - Comments: 0

Hong Hao, senior vice president of the foundry business at Samsung Semiconductor, sat down with Semiconductor Engineering to discuss the future direction of transistors, process technology, lithography and other topics. What follows are excerpts of those conversations. SE: Samsung recently rolled out its 10nm finFET technology. It appears that Samsung is the world’s first company to ship 1... » read more

10nm FinFET Market Heats Up
By Mark LaPedus - 16 Oct, 2016 - Comments: 1

The 10nm finFET market is heating up in the foundry business amid the ongoing push to develop chips at advanced nodes. Not long ago, Intel announced its 10nm finFET process, with plans to ramp up the technology in 2017. Then, TSMC recently introduced its 10nm process, with plans to move into production by the fourth quarter of 2016. Now, Samsung Electronics said that it has commenced mass... » read more

Mask Maker Worries Grow
By Mark LaPedus - 22 Sep, 2016 - Comments: 0

Photomasks are becoming more complex and expensive at each node, thereby creating a number of challenges on several fronts. For one thing, the features on the [getkc id="265" kc_name="photomask"] are becoming smaller and more complex at each node. Second, the number of masks per mask-set are increasing as a result of multiple patterning. Third, it costs more to build and equip a new mask fab... » read more

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