tag: 22nm

Challenges At Advanced Nodes
By Ed Sperling - 09 Sep, 2015 - Comments: 0

Semiconductor Engineering sat down to discuss finFETs, 22nm FD-SOI and how the how the market will segment over the next few years with Marie Semeria, CEO of [getentity id="22192" e_name="Leti"]; Patrick Soheili, vice president of product management and corporate development at [getentity id="22242" e_name="eSilicon"]; Paul Boudre, CEO of Soitec; and Subramani Kengeri, vice president of global ... » read more

Interconnect Challenges Grow
By Mark LaPedus - 20 Aug, 2015 - Comments: 1

It’s becoming apparent that traditional chip scaling is slowing down. The 16nm/14nm logic node took longer than expected to unfold. And the 10nm node and beyond could suffer the same fate. So what’s the main cause? It’s hard to pinpoint the problem, although many blame the issues on lithography. But what could eventually hold up the scaling train, and undo Moore’s Law, is arguably t... » read more

Challenges At Advanced Nodes
By Ed Sperling - 19 Aug, 2015 - Comments: 0

Semiconductor Engineering sat down to discuss finFETs, 22nm FD-SOI and how the how the market will segment over the next few years with Marie Semeria, CEO of [getentity id="22192" e_name="Leti"]; Patrick Soheili, vice president of product management and corporate development at [getentity id="22242" e_name="eSilicon"]; Paul Boudre, CEO of Soitec; and Subramani Kengeri, vice president of global ... » read more

Which Process, Material, IP?
By Ed Sperling - 30 Jul, 2015 - Comments: 1

For years chipmakers have been demanding more choices. They've finally gotten what they wished for—so many possibilities, in fact, that engineering teams of all types are having trouble wading through them. And to make matters worse, some choices now come with unexpected and often unwanted caveats. At the most advanced nodes it's a given that being able to shrink features and double patter... » read more

Reliability After Planar Silicon
By Katherine Derbyshire - 29 Jul, 2015 - Comments: 2

Negative bias temperature instability (NBTI) poses a very serious reliability challenge for highly scaled planar silicon transistors, as previously discussed. However, the conventional planar silicon transistor appears to be nearing the end of its life for other reasons, too. The mobility of carriers in silicon limits switching speed even as it becomes more difficult to maintain sufficient elec... » read more

The Great Imbalance
By Ed Sperling - 23 Jul, 2015 - Comments: 2

The number of options for chipmakers is growing while the number of chipmakers is shrinking. So what does this mean for the semiconductor industry? Short answer: No one is quite sure yet. But a lot more people are beginning to ask that question these days, including investors and analysts. There are a number of factors at play here. To begin with, there are more nodes to choose from than at ... » read more

Challenges At Advanced Nodes
By Ed Sperling - 23 Jul, 2015 - Comments: 1

Semiconductor Engineering sat down to discuss finFETs, 22nm FD-SOI and how the how the market will segment over the next few years with Marie Semeria, CEO of [getentity id="22192" e_name="Leti"]; Patrick Soheili, vice president of product management and corporate development at [getentity id="22242" e_name="eSilicon"]; Paul Boudre, CEO of Soitec; and Subramani Kengeri, vice president of global ... » read more

Tech Talk: 22nm FD-SOI
By Ed Sperling - 13 Jul, 2015 - Comments: 0

Subramani Kengeri, vice president of global design solutions at GlobalFoundries, discusses the evolution of 22nm FD-SOI and its advantages, including single patterning in the middle end of line, 0.4 volt operating voltage, and how it compares to finFETs in terms of performance. [youtube vid=5fa1AcIGcUw] » read more

Moore’s Law Reset?
By Ed Sperling - 13 Jul, 2015 - Comments: 0

GlobalFoundries today took the wraps off its 22nm FD-SOI process, promising to extend Moore's Law technologically without altering the economic equation—at least for the next couple of process nodes. Subramani Kengeri, vice president of global design solutions at [getentity id="22819" comment="GlobalFoundries"], said 22nm FD-SOI will provide the same 30% improvement in PPA that has been c... » read more

Moore Memory Problems
By Brian Bailey - 09 Jul, 2015 - Comments: 0

The six-transistor static memory cell (SRAM) has been the mainstay of on-chip memory for several decades and has stood the test of time. Today, many advanced SoCs have 50% of the chip area covered with these memories and so they are critical to continued scaling. “The SRAM being used in modern systems is similar to the SRAM they were using in the 1970s and 1980s,” says Duncan Bremner, ch... » read more

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