tag: 28nm

FD-SOI – Consortium Results (Part 2 of 3): Power and Performance
By Various Writers - 21 Mar, 2012 - Comments: 0

The results of the most recent SOI Consortium benchmarking study detail the interest of planar FD-SOI as early as the 28nm and 20nm technology nodes, in terms of performance, power and manufacturability. This 3-part blog series looks further at some of the implications. ~~ Fully depleted transistor architectures such as Planar FD-SOI, FinFETs (which is also a fully-depleted technolog... » read more

FD-SOI Workshop ppts – STM’s 1st 28nm FD-SOI product line
By Various Writers - 12 Mar, 2012 - Comments: 0

The SOI Consortium’s 6th FD-SOI workshop, held just after ISSCC, yielded some exciting news. Most of the presentations are freely available for downloading from the SOI Consortium website. Here are the highlights. STMicroelectronics In a terrific presentation by Giorgio Cesana, Marketing Director at STMicroelectronics, he revealed that the company would be releasing a major product line b... » read more

FD-SOI – Recent Consortium Results (Part 1 of 3): Manufacturing
By Various Writers - 05 Mar, 2012 - Comments: 0

The most recent SOI Consortium benchmarking study regarding 28nm and 20nm FD-SOI results (silicon-calibrated simulations at the 28nm node of complex circuits including ARM cores and DDR3 memory controllers) covered a lot of ground. This post is part 1 of a 3-part blog series that will be highlighting key points with respect to: 1. manufacturing; 2. power & performance; 3. 20nm benchmarking ... » read more

How Long Will 28nm Last?
By Ed Sperling - 12 Jan, 2012 - Comments: 0

By Ann Steffora Mutschler As soon as a next generation semiconductor manufacturing process node is out, bets are taken on just how long the current advanced process node will last. The 28/20nm transition is no exception. There is certainly a benefit to moving from 40nm to 28nm. The  availability of high-k/metal gate technology offers quite a few advantages in terms of power reduction... » read more

FD-SOI bests FinFETs for mobile multimedia SOCs? ST says yes.
By Various Writers - 29 Nov, 2011 - Comments: 0

In a recent and excellent article in ASN by Thomas Skotnicki, Director of the Advanced Devices Program at STMicro, he explains in a very clear and accessible way why FD-SOI with ultra-thin Body & Box (UTBB) is a better solution for mobile, multimedia SOCs than FinFETs -- starting at the 28nm node and running clearly through 8nm.  It is based on the paper he presented at the 2011 IEEE SOI C... » read more

CMP, ST et al offer 28nm FD-SOI for prototyping, research
By Various Writers - 06 Nov, 2011 - Comments: 0

Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~  ~ What would a port to 28nm FD-SOI do for your design?  A recent announcement by CMP, STMicroelectronics and Soitec invites you to find out.  Specifically, ST’s CMOS 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) process – which uses innovative silicon substrates from Soitec and incorporates robust, compact model... » read more

Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2025 SMG   |  Terms of Service  |  Privacy Policy