Simulation Study Of Vertically Stacked 2D NSFETs


A new technical paper titled "Simulation of Vertically Stacked 2-D Nanosheet FETs" was published by researchers at Università di Pisa and TU Wien. Abstract "We present a simulation study of vertically stacked 2-D nanosheet field-effect transistors (NSFETs). The aim of this investigation is to assess the performance and potential of FinFET alternatives, i.e., gate-all-around (GAA) nanosheet... » read more

Scalable Approach to Fabricate Memristor Arrays at Wafer-scale


New technical paper titled "Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing" from researchers at National University of Singapore and Institute of High Performance Computing, Singapore. Abstract "Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their develop... » read more

Nudging 2D semiconductors forward


The buzz about 2D materials replacing silicon appears to be premature. While 2D semiconductors have emerged as potential successors, it's not clear when or even if that will happen. As Iuliana Radu, Imec's director of quantum and exploratory computing observed, the “end” of silicon has been predicted many times before. It is not clear when 2D semiconductors will need to be ready. In fac... » read more