tag: 5nm

EUV Reaches A Crossroads
By Mark LaPedus - 20 Mar, 2014 - Comments: 3

[gettech id="31045" comment="EUV"] (EUV) [getkc id="80" comment="lithography"] is at a crossroads. 2014 represents a critical year for the technology. In fact, it may answer a pressing question about EUV: Does it work or not? It’s too early to make that determination right now, but there are more uncertainties than ever for the oft-delayed technology. Originally aimed for the 65nm node in... » read more

The Search For The Next Transistor
By Mark LaPedus - 20 Feb, 2014 - Comments: 3

In the near term, the leading-edge chip roadmap looks fairly clear. Chips based on today’s finFETs and planar fully depleted silicon-on-insulator (FDSOI) technologies are expected to scale down to the 10nm node. But then, the CMOS roadmap becomes foggy at 7nm and beyond. The industry has been exploring a number of next-generation transistor candidates, but suddenly, a few technologies are ... » read more

Executive Insight: Luc Van den hove
By Mark LaPedus - 20 Feb, 2014 - Comments: 1

Semiconductor Engineering sat down to discuss current and future process technology challenges with Luc Van den hove, president and chief executive of Imec. What follows are excerpts of that conversation. SE: The industry is simultaneously working on several new and expensive technologies. This includes extreme ultraviolet (EUV) lithography and the next-generation 450mm wafer size. The indu... » read more

Interconnect Challenges Grow
By Mark LaPedus - 20 Feb, 2014 - Comments: 0

Qualcomm outlined the technology challenges facing mobile chip suppliers at a recent event. In no particular order, the challenges include the usual suspects—area scaling, power reduction, performance and cost. Another concern for Qualcomm is an often-overlooked part of the equation—the backend-of-the-line (BEOL). In chip production, the BEOL is where the interconnects are formed within ... » read more

What’s After CMOS?
By Mark LaPedus - 24 Jan, 2014 - Comments: 3

Chipmakers continue to scale the CMOS transistor to finer geometries, but the question is for how much longer. The current thinking is that the CMOS transistor could scale at least to the 3nm node in the 2021 timeframe. And then, CMOS could run out of gas, prompting the need for a new switch technology. So what’s after the CMOS-based transistor? Carbon nanotubes and graphene get the most a... » read more

What’s After 10nm?
By Mark LaPedus - 14 Nov, 2013 - Comments: 0

For some time, chipmakers have roughly doubled the transistor count at each node, while simultaneously cutting the cost by around 29%. IC scaling, in turn, enables faster and lower cost chips, which ultimately translates into cheaper electronic products with more functions. Consumers have grown accustomed to the benefits of Moore’s Law, but the question is for how much longer? Chips based ... » read more

Experts At The Table: Process Technology Challenges
By Mark LaPedus - 13 Sep, 2013 - Comments: 0

By Mark LaPedus Semiconductor Manufacturing & Design sat down to discuss future transistor, process and manufacturing challenges with Subramani Kengeri, vice president of advanced technology architecture at GlobalFoundries; Carlos Mazure, chief technical officer at Soitec; Raj Jammy, senior vice president and general manager of the Semiconductor Group at Intermolecular; and Girish Dixit, v... » read more

Experts At The Table: Process Technology Challenges
By Mark LaPedus - 05 Sep, 2013 - Comments: 0

By Mark LaPedus Semiconductor Manufacturing & Design sat down to discuss future transistor, process and manufacturing challenges with Subramani Kengeri, vice president of advanced technology architecture at GlobalFoundries; Carlos Mazure, chief technical officer at Soitec; Raj Jammy, senior vice president and general manager of the Semiconductor Group at Intermolecular; and Girish Dixit, v... » read more

Deep Inside Intel
By Ed Sperling - 18 Oct, 2012 - Comments: 0

By Ed Sperling Semiconductor Manufacturing & Design sat down with Mark Bohr, senior fellow at Intel, to talk about a wide range of manufacturing and design issues Intel is wrestling with at advanced nodes—and just how far the road map now extends. SMD: Will EUV make 10nm? And if it doesn’t, what effect will that have on Intel? Bohr: For a process module as critical as lithography... » read more

What Comes After FinFETs?
By Ed Sperling - 16 Aug, 2012 - Comments: 0

By Mark LaPedus The semiconductor industry is currently making a major transition from conventional planar transistors to finFETs starting at 22nm. The question is what’s next? In the lab, IBM, Intel and others have demonstrated the ability to scale finFETs down to 5nm or so. If or when finFETs runs out of steam, there are no less than 18 different next-generation candidates that could o... » read more

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