tag: EUV

Challenges Linger For EUV
By Mark LaPedus - 11 Nov, 2020 - Comments: 2

Semiconductor Engineering sat down to discuss lithography and photomask issues with Bryan Kasprowicz, director of technology and strategy and a distinguished member of the technical staff at Photronics; Harry Levinson, principal at HJL Lithography; Noriaki Nakayamada, senior technologist at NuFlare; and Aki Fujimura, chief executive of D2S. What follows are excerpts of that conversation. To vie... » read more

Manufacturing Bits: Nov. 9
By Mark LaPedus - 09 Nov, 2020 - Comments: 0

Open-source EUV resist metrology Paul Scherrer Institute (PSI) has developed an open-source software technology for scanning electron microscopy (SEM) applications. The technology is targeted for EUV resist metrology. The technology, called SMILE (SEM-Measured Image Lines Estimator), is an open source software technology, which characterizes line and space patterns in a SEM. SMILE is used t... » read more

Si Hardmask (Si-HM), EUV And Zero Defects
By Hao Lee - 26 Oct, 2020 - Comments: 0

The multilayer system used in lithography consists of a planarizing carbon layer beneath a hardmask etch-transferring layer and capped with a standard photoresist coating. In the past, Brewer Science has discussed in-depth how the multilayer system helped to extend ArF (193 nm) immersion lithography to be able to print and transfer ever-shrinking features, ensuring enough process window especia... » read more

Mask/Lithography Issues For Mature Nodes
By Mark LaPedus - 22 Oct, 2020 - Comments: 0

Semiconductor Engineering sat down to discuss lithography and photomask issues with Bryan Kasprowicz, director of technology and strategy and a distinguished member of the technical staff at Photronics; Harry Levinson, principal at HJL Lithography; Noriaki Nakayamada, senior technologist at NuFlare; and Aki Fujimura, chief executive of D2S. What follows are excerpts of that conversation. ... » read more

Impact Of EUV Resist Thickness On Local Critical Dimension Uniformities For <30nm CD Via Patterning
By Coventor - 21 Oct, 2020 - Comments: 0

This paper describes the impact of extreme ultraviolet (EUV) resist thickness on <30 nm via local critical dimension uniformity (LCDU) measured during after development inspection (ADI) and after etch inspection (AEI). For the same post-etch CD targets, increasing resist thickness from 40 to 60 nm helped reduced CD variability. This work was performed via virtual fabrication using Coventor�... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 16 Oct, 2020 - Comments: 0

Chipmakers and OEMs Intel is exiting the NAND flash market. SK Hynix and Intel announced that they have signed an agreement on Oct. 20, under which SK Hynix would acquire Intel’s NAND memory and storage business for $9 billion.The transaction includes the NAND SSD business, the NAND component and wafer business, and the Dalian NAND memory manufacturing facility in China. Intel will retain it... » read more

Manufacturing Bits: Oct. 12
By Mark LaPedus - 12 Oct, 2020 - Comments: 1

MoSi2 pellicles for EUV Hanyang University has presented a paper that describes a novel molybdenum disilicide (MoSi2) pellicle membrane for use in extreme ultraviolet (EUV) lithography. With a 28nm thickness, a MoSi2 membrane has demonstrated a 89.33% transmittance for EUV lithography. The pellicle technology is still in R&D. MoSi2, which is a silicide of molybdenum, is a refractory cer... » read more

Manufacturing Bits: Oct. 6
By Mark LaPedus - 06 Oct, 2020 - Comments: 0

High-NA EUV mask materials A team of researchers have presented a new paper on the tradeoffs of photomask absorber materials for high-NA extreme ultraviolet (EUV) lithography. In the paper, researchers concluded that the industry will likely require an alternative mask absorber stack for high-numerical aperture (high-NA) EUV lithography. Fraunhofer, Imec, ASML and Zeiss contributed to the... » read more

eBeam Initiative Surveys Report Upbeat Photomask Market Outlook
By Jan Willis - 05 Oct, 2020 - Comments: 0

Every year, the eBeam Initiative conducts surveys that provide valuable insight into the key trends that are shaping the semiconductor industry. This year, industry luminaries representing 42 companies from across the semiconductor ecosystem participated in the 2020 eBeam Initiative Luminaries survey. 89% of respondents to the survey predict that photomask (mask) revenues in 2020 will stay the ... » read more

Manufacturing Bits: Sept. 29
By Mark LaPedus - 29 Sep, 2020 - Comments: 0

Exploring chemical reactions using EUV The University of Tokyo has established a facility to study fast chemical reactions using a coherent extreme ultraviolet light source. The new coherent extreme ultraviolet (XUV) source facility enables researchers to explore time-dependent phenomena, such as ultrafast chemical reactions of biological or physical samples. Located in an underground fa... » read more

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