What’s Next In AI, Chips And Masks

By Mark LaPedus - 19 Nov, 2020 - Comments: 0

Aki Fujimura, chief executive of D2S, sat down with Semiconductor Engineering to talk about AI and Moore’s Law, lithography, and photomask technologies. What follows are excerpts of that conversation. SE: In the eBeam Initiative’s recent Luminary Survey, the participants had some interesting observations about the outlook for the photomask market. What were those observations? Fujimur... » read more

Survey: eBeam Initiative Luminaries (formerly Perceptions) Survey Results

By eBeam Initiative - 18 Nov, 2020 - Comments: 0

Survey of 77 industry luminaries across 42 different companies in July 2020 says net neutral COVID-19 business impact by 2021, with 24% positive vs 20% negative predictions. Click here to view the survey results. » read more

Challenges Linger For EUV

By Mark LaPedus - 11 Nov, 2020 - Comments: 2

Semiconductor Engineering sat down to discuss lithography and photomask issues with Bryan Kasprowicz, director of technology and strategy and a distinguished member of the technical staff at Photronics; Harry Levinson, principal at HJL Lithography; Noriaki Nakayamada, senior technologist at NuFlare; and Aki Fujimura, chief executive of D2S. What follows are excerpts of that conversation. To vie... » read more

Manufacturing Bits: Nov. 9

By Mark LaPedus - 09 Nov, 2020 - Comments: 0

Open-source EUV resist metrology Paul Scherrer Institute (PSI) has developed an open-source software technology for scanning electron microscopy (SEM) applications. The technology is targeted for EUV resist metrology. The technology, called SMILE (SEM-Measured Image Lines Estimator), is an open source software technology, which characterizes line and space patterns in a SEM. SMILE is used t... » read more

Si Hardmask (Si-HM), EUV And Zero Defects

By Hao Lee - 26 Oct, 2020 - Comments: 0

The multilayer system used in lithography consists of a planarizing carbon layer beneath a hardmask etch-transferring layer and capped with a standard photoresist coating. In the past, Brewer Science has discussed in-depth how the multilayer system helped to extend ArF (193 nm) immersion lithography to be able to print and transfer ever-shrinking features, ensuring enough process window especia... » read more

Mask/Lithography Issues For Mature Nodes

By Mark LaPedus - 22 Oct, 2020 - Comments: 0

Impact Of EUV Resist Thickness On Local Critical Dimension Uniformities For <30nm CD Via Patterning

By Coventor - 21 Oct, 2020 - Comments: 0

This paper describes the impact of extreme ultraviolet (EUV) resist thickness on <30 nm via local critical dimension uniformity (LCDU) measured during after development inspection (ADI) and after etch inspection (AEI). For the same post-etch CD targets, increasing resist thickness from 40 to 60 nm helped reduced CD variability. This work was performed via virtual fabrication using Coventor�... » read more

Week In Review: Manufacturing, Test

By Mark LaPedus - 16 Oct, 2020 - Comments: 0

Chipmakers and OEMs Intel is exiting the NAND flash market. SK Hynix and Intel announced that they have signed an agreement on Oct. 20, under which SK Hynix would acquire Intel’s NAND memory and storage business for $9 billion.The transaction includes the NAND SSD business, the NAND component and wafer business, and the Dalian NAND memory manufacturing facility in China. Intel will retain it... » read more

Manufacturing Bits: Oct. 12

By Mark LaPedus - 12 Oct, 2020 - Comments: 1

MoSi2 pellicles for EUV Hanyang University has presented a paper that describes a novel molybdenum disilicide (MoSi2) pellicle membrane for use in extreme ultraviolet (EUV) lithography. With a 28nm thickness, a MoSi2 membrane has demonstrated a 89.33% transmittance for EUV lithography. The pellicle technology is still in R&D. MoSi2, which is a silicide of molybdenum, is a refractory cer... » read more

Manufacturing Bits: Oct. 6

By Mark LaPedus - 06 Oct, 2020 - Comments: 0

High-NA EUV mask materials A team of researchers have presented a new paper on the tradeoffs of photomask absorber materials for high-NA extreme ultraviolet (EUV) lithography. In the paper, researchers concluded that the industry will likely require an alternative mask absorber stack for high-numerical aperture (high-NA) EUV lithography. Fraunhofer, Imec, ASML and Zeiss contributed to the... » read more

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tag: EUV

What’s Next In AI, Chips And Masks

Survey: eBeam Initiative Luminaries (formerly Perceptions) Survey Results

Challenges Linger For EUV

Manufacturing Bits: Nov. 9

Si Hardmask (Si-HM), EUV And Zero Defects

Mask/Lithography Issues For Mature Nodes

Impact Of EUV Resist Thickness On Local Critical Dimension Uniformities For <30nm CD Via Patterning

Week In Review: Manufacturing, Test

Manufacturing Bits: Oct. 12

Manufacturing Bits: Oct. 6

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