Experts At The Table: Multipatterning


By Ed Sperling Semiconductor Manufacturing & Design sat down with Michael White, physical verification product line manager at Mentor Graphics; Luigi Capodieci, R&D fellow at GlobalFoundries; Lars Liebmann, IBM distinguished engineer; Rob Aitken, ARM fellow; Jean-Pierre Geronimi, CAD director at STMicroelectronics; and Kuang-Kuo Lin, director of foundry design enablement at Samsung El... » read more

Capping Tools Tame Electromigration


By Mark LaPedus The shift towards the 28nm node and beyond has put the spotlight back on the interconnect in semiconductor manufacturing. In chip scaling, the big problem in the interconnect is resistance-capacitance (RC). Another, and sometimes forgotten, issue is electromigration. “Electromigration gets worse in device scaling,” said Daniel Edelstein, an IBM Fellow and manager of BE... » read more

Investment Options


It's clear that something fundamental has changed in the semiconductor manufacturing industry. What's less clear is how this will play out over the long term. Intel's agreement to invest more than $4 billion in ASML to ensure the continued development of EUV and 450mm wafer technology is more than just a one-off deal. It's a very public recognition that the astronomical cost of design and ma... » read more

SoC Platforms Gain Steam


By Ed Sperling Platforms are attracting far more attention from makers of SoCs because they are pre-verified and can speed time to market, but the shift isn’t so simple. It will spark major changes in the way companies design and build chips, causing significant disruption across the entire SoC ecosystem. Platforms are nothing new in the processor and software world. Intel, IBM AMD, and N... » read more

More Design Rules Ahead


By Ed Sperling & Mark LaPedus For those companies that continue to push the limits of feature shrinkage, designs are about to become more difficult, far more expensive—and much more regulated. Two converging factors will force these changes. First, the limits of current 193nm immersion lithography mean companies now must double pattern at 20nm, and potentially quadruple pattern at 14n... » read more

Experts At The Table: Multipatterning


By Ed Sperling Semiconductor Manufacturing & Design sat down with Michael White, physical verification product line manager at Mentor Graphics; Luigi Capodieci, R&D fellow at GlobalFoundries; Lars Liebmann, IBM distinguished engineer; Rob Aitken, ARM fellow; Jean-Pierre Geronimi, CAD director at STMicroelectronics; and Kuang-Kuo Lin, director of foundry design enablement at Samsung Ele... » read more

Experts At The Table: Multipatterning


By Ed Sperling Semiconductor Manufacturing & Design sat down with Michael White, physical verification product line manager at Mentor Graphics; Luigi Capodieci, R&D fellow at GlobalFoundries; Lars Liebmann, IBM distinguished engineer; Rob Aitken, ARM fellow; Jean-Pierre Geronimi, CAD director at STMicroelectronics; and Kuang-Kuo Lin, director of foundry design enablement at Samsung Ele... » read more

CNSE Readying NFX Fab for G450C, EUV Efforts


By David Lammers Two key areas of the semiconductor industry’s future—the 450mm wafer transition and EUV lithography—are the focus of the new NFX (NanoFab Xtension) building now under construction at the College of Nanoscale Science and Engineering (CNSE) of the University at Albany. [caption id="attachment_6322" align="alignright" width="120" caption="Alain Kaloyeros"][/caption] T... » read more

Challenges Mount For Interconnect


By Mark LaPedus There are a plethora of chip-manufacturing challenges for the 20nm node and beyond. When asked what are the top challenges facing leading-edge chip makers today, Gary Patton, vice president of the Semiconductor Research and Development Center at IBM, said it boils down to two major hurdles: lithography and the interconnect. The problems with lithography are well documented.... » read more

Fabless-Foundry Model Under Stress


By Mark LaPedus The semiconductor roadmap was once a smooth and straightforward path, but chipmakers face a bumpy and challenging ride as they migrate to the 20nm node and beyond. Among the challenges seen on the horizon are the advent of 3D stacking, 450mm fabs, new transistor architectures, multi-patterning, and the questionable availability of extreme ultraviolet (EUV) lithography. ... » read more

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