Transferring Skills Getting Harder

By Ed Sperling - 19 Jan, 2017 - Comments: 0

Rising complexity in developing chips at advanced nodes, and an almost perpetual barrage of new engineering challenges at each new node, are making it more difficult for everyone involved to maintain consistent skill levels across a growing number of interrelated technologies. The result is that engineers are being forced to specialize, but when they work with other engineers with different ... » read more

Inside Photomask Writing

By Mark LaPedus - 19 Jan, 2017 - Comments: 0

Hirokazu Yamada, a board member and the director of the Mask Lithography Division of NuFlare, sat down with Semiconductor Engineering to discuss photomask technology, e-beam mask writer trends and other topics. NuFlare is the world’s largest supplier of e-beam mask writers. What follows are excerpts of that conversation. SE: How does the [getkc id="265" kc_name="photomask"] market look in... » read more

BEOL Issues At 10nm And 7nm (part 2)

By Ed Sperling - 04 Jan, 2017 - Comments: 3

Semiconductor Engineering sat down to discuss problems with the back end of line at leading-edge nodes with Craig Child, senior manager and deputy director for [getentity id="22819" e_name="GlobalFoundries'"] advanced technology development integration unit; Paul Besser, senior technology director at [getentity id="22820" comment="Lam Research"]; David Fried, CTO at [getentity id="22210" e_name... » read more

Reflecting Back On 2016

By Brian Bailey - 22 Dec, 2016 - Comments: 0

Anyone can make a prediction, and sometimes the more outlandish they are the more they get noticed. But at the end of the year some people hit the mark while others may have been way off. Many people simply make projections based on the current trajectory of trends, while others look for the potential discontinuities that may lie ahead. Semiconductor Engineering examines the projections made... » read more

Morphing Moore’s Law

By Ed Sperling - 15 Dec, 2016 - Comments: 0

In 1965, Gordon Moore defined a timetable for doubling the number of transistors on a piece of silicon every two years. The law, as he originally defined it, is now hopelessly outdated. Any attempts to apply it to the most advanced chips today are a stretch at best, and complete fiction at worst. No one is on a two-year cadence between process nodes anymore—not even Intel. In fact, no one ... » read more

Inside Advanced Patterning

By Mark LaPedus - 15 Dec, 2016 - Comments: 0

Prabu Raja, group vice president and general manager for the Patterning and Packaging Group at [getentity id="22817" e_name="Applied Materials"], sat down with Semiconductor Engineering to discuss the trends in patterning, selective processes and other topics. Raja is also a fellow at Applied Materials. What follows are excerpts of that conversion. SE: From your standpoint, what are the big... » read more

BEOL Issues At 10nm And 7nm (Part 1)

By Ed Sperling - 15 Dec, 2016 - Comments: 5

And The Award Goes To…

By Brian Bailey - 22 Nov, 2016 - Comments: 0

I like to look at what users find the most interesting topics, not because it directly influences what I write, but to get a sense of the subjects that are on most people's minds. Some of it comes as no surprise. Content about new fabrication technologies tends to blow everything else away. While it directly affects very few of us, I think we all want to know the general direction of the indust... » read more

Fill/Cut Self-Aligned Double-Patterning

By David Abercrombie - 17 Nov, 2016 - Comments: 0

By David Abercrombie, Rehab Ali, Ahmed Hamed-Fatehy, and Shetha Nolke Self-aligned double patterning (SADP) is an alternative double-patterning process to the traditional litho-etch-litho-etch (LELE) approach used in most advanced production nodes. The main difference between the two approaches is that in LELE, the layout is divided between two masks, and the second mask is aligned with resp... » read more

Mastering The Magic Of Multi-Patterning

By Mentor, a Siemens Business - 17 Nov, 2016 - Comments: 0

Multi-patterning technology was introduced at the 20 nm node to overcome lithographic limitations in current IC manufacturing processes. While processes like double and triple patterning may sometimes seem like magic, successfully implementing multi-patterning compliance in the IC design and verification flow requires a thorough understanding of multi-patterning techniques and their impact on y... » read more

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tag: lithography

Transferring Skills Getting Harder

Inside Photomask Writing

BEOL Issues At 10nm And 7nm (part 2)

Reflecting Back On 2016

Morphing Moore’s Law

Inside Advanced Patterning

BEOL Issues At 10nm And 7nm (Part 1)

And The Award Goes To…

Fill/Cut Self-Aligned Double-Patterning

Mastering The Magic Of Multi-Patterning

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