tag: TSVs

Temporary Bonding, Debonding Remains Challenging For TSV Adoption
By Jeff Chappell - 28 Oct, 2013 - Comments: 0

By Jeff Chappell One issue with the adoption of TSVs in 3D ICs in mainstream semiconductor applications revolves around the throughput of the temporary wafer bonding and debonding process. This doesn't necessarily equate to a roadblock, but work certainly remains to be done on this and related issues. On one hand, TSVs already are being used in the manufacturing of compound semiconductors ... » read more

TSVs: Welcome To The Era Of Probably Good Die
By Jeff Chappell - 21 Oct, 2013 - Comments: 0

Among the challenges of a widespread adoption of 3D ICs is how to test them, particularly when it comes to through-silicon vias (TSVs). While not necessarily presenting a roadblock, TSVs use in the mainstream will almost certainly change traditional test strategies. In fact for many chipmakers looking to stack their silicon, they may come to rely less on the traditional known good die (KGD) ... » read more

The Upside Of Through-Silicon Vias
By Katherine Derbyshire - 17 Oct, 2013 - Comments: 0

Through-silicon vias (TSVs) for 3D integration are superficially similar to damascene copper interconnects for integrated circuits. Both etch the via, into either silicon or a dielectric, line it with a barrier against copper diffusion, then deposit a seed layer prior to filling the via with copper using some form of aqueous deposition. In both processes, the integrity of the diffusion barrier ... » read more

Manufacturing Bits: Oct. 1
By Mark LaPedus - 01 Oct, 2013 - Comments: 0

Nanoimprint Foundry Singapore’s A*STAR’s Institute of Materials Research and Engineering (IMRE) and its partners have launched a new R&D foundry using nanoimprint lithography. The so-called Nanoimprint Foundry is a collaboration between several entities, such as IMRE, Toshiba Machines, EV Group, NTT, NIL Technology, Kyodo International, Micro Resist Technology, Nanoveu and Solves In... » read more

Front End Comes To The Back End
By Jeff Chappell - 19 Sep, 2013 - Comments: 0

By Jeff Chappell For outsourced assembly and test (OSAT) houses either planning for or already offering through-silicon via (TSV) capability for their 3D packaging efforts, this has meant the front end is coming to the back end, in a manner of speaking. A bit of an exaggeration perhaps, as most generalizations are. But thanks to TSVs, in a very real sense some of what would typically be the... » read more

Memory Architectures Undergo Changes
By Ed Sperling - 22 Aug, 2013 - Comments: 0

By Ed Sperling Memory architectures are taking some new twists. Fueled by multi-core and multiple processors, as well as some speed bumps using existing technology, SoC makers are beginning to rethink how to architect, model and assemble memory to improve speed, lower power and reduce cost. What’s unusual about all of this is that it doesn’t rely on new technology, although there certai... » read more

Japan: Latest Investment Activities
By Dan Tracy - 15 Aug, 2013 - Comments: 0

By Dan Tracy and Yoichiro Ando Restructuring and consolidation has led to a new focus for the semiconductor manufacturers in Japan. As a result, the semiconductor equipment market in Japan will experience double-digit growth in both 2013 and 2014, driven by higher spending for memory production and in spending increases planned for the manufacturing of power semiconductors and “More than Moo... » read more

China Foundries Seek Niches
By Mark LaPedus - 15 Aug, 2013 - Comments: 0

By Mark LaPedus For decades, China has launched several initiatives to modernize its semiconductor industry with hopes of becoming the next IC powerhouse in Asia. In 2001, for example, China unveiled its so-called "Tenth Five-Year Plan," which called for the nation to build 25 new fabs from 2001 to 2005. At the time, the Chinese government hoped to start and fund a new crop of domestic fou... » read more

Materials, Software And Techniques
By Ed Sperling - 26 Jul, 2013 - Comments: 0

The future of advanced semiconductor technology is about to split evenly into three different areas. On the leading edge of manufacturing, Applied Materials CEO Mike Splinter called it correctly—it’s all about materials. Just shrinking features isn’t buying much anymore. In fact, at advanced nodes, with extra margin built into designs, it frequently doesn’t buy anything except extra ... » read more

Changes And Challenges
By Ed Sperling - 18 Jul, 2013 - Comments: 0

At 130nm, the shift to copper interconnects and 300mm wafer sizes was considered to be the most difficult transition in its long and incredibly efficient history. The next chapter will be even tougher. It’s not that change is a foreign concept to semiconductor design and manufacturing. In fact, it’s probably the only constant over the past 50 years. But in the past, those changes tended ... » read more

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