What’s Next For Through-Silicon Vias


From large TSVs for MEMS to nanoTSVs for backside power delivery, cost-effective process flows for these interconnects are essential for making 2.5D and 3D packages more feasible. Through-silicon vias (TSVs) enable shorter interconnect lengths, which reduces chip power consumption and latency to carry signals faster from one device to another or within a device. Advanced packaging technology... » read more

Navigating Increased Complexity In Advanced Packaging


As chips evolve toward stacked, heterogeneous assemblies and adopt more complex materials, engineers are grappling with new and often less predictable sources of variation. This is redefining what it means to achieve precision, forcing companies to rethink everything from process control and in-line metrology to materials selection and multi-level testing. These assemblies are the result of ... » read more

Monolithic Vs. Heterogeneous Integration


Experts at the Table: Semiconductor Engineering sat down to discuss two very different paths forward for semiconductors and what's needed for each, with Jamie Schaeffer, vice president of product management at GlobalFoundries; Dechao Guo, director of advanced logic technology R&D at IBM; Dave Thompson, vice president at Intel; Mustafa Badaroglu, principal engineer at Qualcomm; and Thomas Po... » read more

Scalability of Nanosheet Oxide FETs for Monolithic 3-D Integration


A new technical paper titled "High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling" was published by researchers at The University of Tokyo and Nara Institute of Science and Technology. Abstract "We have investigated the scaling potential of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3-D (M3D) integration in t... » read more

Improving The Gate Oxide Reliability in Gate First HKMG DRAM Structures (Sungkyunkwan Univ., Samsung)


A new technical paper titled "Novel STI Technology for Enhancing Reliability of High-k/Metal Gate DRAM" was published by researchers at Sungkyunkwan University and Samsung Electronics. Abstract: "The challenges associated with semiconductor are increasing because of the rapid changes in the semiconductor market and the extreme scaling of semiconductors, with some processes reaching their te... » read more

Sidestepping Lithography In Chip Manufacturing


Rising lithography costs, shrinking feature sizes, and the need for an alternative to copper are collectively spurring new interest in area-selective deposition. An extension of atomic layer deposition, ASD seeks to build circuit features from the bottom up, without relying on lithography. Lithography will remain a critical tool for the foreseeable future. But it has long been the most expen... » read more

Enabling Advanced Devices With Atomic Layer Processes


Atomic layer deposition (ALD) used to be considered too slow to be of practical use in semiconductor manufacturing, but it has emerged as a critical tool for both transistor and interconnect fabrication at the most advanced nodes. ALD can be speeded up somewhat, but the real shift is the rising value of precise composition and thickness control at the most advanced nodes, which makes the ext... » read more

Performing Multiple, Simultaneous Depositions In A High-Throughput, Multiplexing ALD/MLD-Style Reactor


A technical paper titled “High throughput multiplexing reactor design for rapid screening of atomic/molecular layer deposition processes” was published by researchers at University of Washington. Abstract: "An approach is demonstrated for performing multiple, simultaneous depositions in a high-throughput, multiplexing atomic layer deposition/molecular layer deposition (ALD/MLD)-style reac... » read more

How To Fine-Tune Large-Area Molybdenum Disulfide Atomic Layer Deposition At 150°C


A technical paper titled "Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °C" was published by researchers at Eindhoven University of Technology, University of Michigan, and University College Cork. Abstract: "Two-dimensional MoS2 is a promising material for applications, including electronics and electrocatalysis. However, scalable meth... » read more

Design of Selective Deposition Processes For Nanoscale Electronic Devices


A technical paper titled “Quantified Uniformity and Selectivity of TiO2 Films in 45-nm Half Pitch Patterns Using Area-Selective Deposition Supercycles” was published by researchers at IMEC, North Carolina State University, and KU Leuven. Abstract: "Area-selective deposition (ASD) shows great promise for sub-10 nm manufacturing in nanoelectronics, but significant challenges remain in scali... » read more

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