tag: atomic layer deposition

Scalability of Nanosheet Oxide FETs for Monolithic 3-D Integration
By Technical Paper Link - 22 Oct, 2024 - Comments: 0

A new technical paper titled "High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling" was published by researchers at The University of Tokyo and Nara Institute of Science and Technology. Abstract "We have investigated the scaling potential of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3-D (M3D) integration in t... » read more

Enabling Advanced Devices With Atomic Layer Processes
By Katherine Derbyshire - 18 Apr, 2024 - Comments: 2

Atomic layer deposition (ALD) used to be considered too slow to be of practical use in semiconductor manufacturing, but it has emerged as a critical tool for both transistor and interconnect fabrication at the most advanced nodes. ALD can be speeded up somewhat, but the real shift is the rising value of precise composition and thickness control at the most advanced nodes, which makes the ext... » read more

Performing Multiple, Simultaneous Depositions In A High-Throughput, Multiplexing ALD/MLD-Style Reactor
By Technical Paper Link - 22 Feb, 2024 - Comments: 0

A technical paper titled “High throughput multiplexing reactor design for rapid screening of atomic/molecular layer deposition processes” was published by researchers at University of Washington. Abstract: "An approach is demonstrated for performing multiple, simultaneous depositions in a high-throughput, multiplexing atomic layer deposition/molecular layer deposition (ALD/MLD)-style reac... » read more

How To Fine-Tune Large-Area Molybdenum Disulfide Atomic Layer Deposition At 150°C
By Technical Paper Link - 19 Jul, 2023 - Comments: 0

A technical paper titled "Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °C" was published by researchers at Eindhoven University of Technology, University of Michigan, and University College Cork. Abstract: "Two-dimensional MoS2 is a promising material for applications, including electronics and electrocatalysis. However, scalable meth... » read more

Design of Selective Deposition Processes For Nanoscale Electronic Devices
By Technical Paper Link - 27 Jun, 2023 - Comments: 0

A technical paper titled “Quantified Uniformity and Selectivity of TiO2 Films in 45-nm Half Pitch Patterns Using Area-Selective Deposition Supercycles” was published by researchers at IMEC, North Carolina State University, and KU Leuven. Abstract: "Area-selective deposition (ASD) shows great promise for sub-10 nm manufacturing in nanoelectronics, but significant challenges remain in scali... » read more

Research Bits: June 13
By Jesse Allen - 13 Jun, 2023 - Comments: 0

Converting heat to electricity Researchers at the National Institute of Standards and Technology (NIST) and University of Colorado Boulder fabricated a device to boost the conversion of heat into electricity. The technique involves depositing hundreds of thousands of microscopic columns of gallium nitride atop a silicon wafer. Layers of silicon are then removed from the underside of the waf... » read more

ALD-Oxide Semiconductors: Summary, Benefits And Challenges
By Technical Paper Link - 31 May, 2023 - Comments: 0

A technical paper titled "Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook" was published by researchers at Hanyang University. "In this review, to introduce ALD-oxide semiconductors, we provide: (a) a brief summary of the history and importance of ALD-based oxide semiconductors in industry, (b) a discussion of the benefits of ALD for oxide... » read more

Surface-Activated ALD For Room-Temperature Bonding of Al2O3
By Technical Paper Link - 03 Apr, 2023 - Comments: 0

A new technical paper titled "Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition" was published by researchers at Kyushu University. Abstract "In this study, room-temperature wafer bonding of Al2O3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) metho... » read more

Large Area Process For Atomically Thin 2D Semiconductor, Using Scalable ALD
By Technical Paper Link - 30 Mar, 2023 - Comments: 0

A new technical paper titled "Large-area synthesis of high electrical performance MoS2  by a commercially scalable atomic layer deposition process" by researchers at the University of Southampton, LMU Munich, and VTT Technical Research Centre of Finland. Abstract: "This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required... » read more

Graphene Devices: Suppressing Vibrations By Adding Vibrations (FLEET)
By Technical Paper Link - 15 Dec, 2022 - Comments: 0

A technical paper titled "Passivating Graphene and Suppressing Interfacial Phonon Scattering with Mechanically Transferred Large-Area Ga2O3" was published by researchers at ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University and University of Melbourne. According to FLEET's news article, the research found: -Ultra-thin, liquid-metal-printed oxid... » read more

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