ESD Co-Design For 224G And 112G SerDes In FinFET Technologies

By Synopsys - 25 Oct, 2023 - Comments: 0

In addressing the challenges of enhancing ESD resilience for high-speed SerDes interfaces, it's crucial to ensure the implementation of appropriate ESD protection measures. This is particularly vital during the device's lifecycle from the conclusion of silicon wafer processing to system assembly, a phase during which electronic devices are highly susceptible to Electrostatic Discharge (ESD) dam... » read more

Debugging Point-to-Point Resistance Using Contribution By Layer In IC Validator PERC

By Synopsys - 23 Jun, 2021 - Comments: 0

PERC Point-to-point resistance (P2P resistance) functionality is a crucial EDA technology to enable complex P2P effective resistance measurement along ESD paths in automation for foundry qualified ESD/Latch-up checker or in-house custom checker. This technology is applied to the entire chip, block, and IP designs on cell or transistor level layout database. Since the ESD path count could grow t... » read more

Dangerous Electricity

By Ann Mutschler - 11 Apr, 2013 - Comments: 0

Electricity to the modern age is as indispensible as air, but too much can be a bad thing for automotive and aerospace applications—especially when it is in the form of electrostatic discharge (ESD). As chips advance to 28nm, 20nm and 16nm, the design window for electrostatic discharge is shrinking for a number of reasons, explained Norman Chang is vice president and senior product strategis... » read more

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Entities, people and technologies explored

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tag: chip-level ESD

ESD Co-Design For 224G And 112G SerDes In FinFET Technologies

Debugging Point-to-Point Resistance Using Contribution By Layer In IC Validator PERC

Dangerous Electricity