tag: contact resistance

Balancing Parallel Test Productivity With Yield & Cost
By Anne Meixner - 12 Nov, 2024 - Comments: 0

Parallel test is used for nearly every device produced by fabs and OSATs, but it can reduce yield and increase the cost of test boards and operations. This is a well-understood tradeoff for ensuring consistent test accuracy across multiple sites and reducing test time. Collectively, ATEs and multi-site test boards — DUT interface boards (DIBs), probe cards, and load boards — significantl... » read more

Potential Of 2D Semi-Metallic PtSe2 As Source/Drain Contacts For 2D Material FETs
By Technical Paper Link - 13 Aug, 2024 - Comments: 0

A technical paper titled “Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts” was published by researchers at Yonsei University, Korea Advanced Institute of Science and Technology (KAIST), Lincoln University College, Korea Institute of Science and Technology (KIST), and Ewha Womans University. Abstract: "In this ... » read more

GaN Devices: Properties and Performance At Extremely High Temperatures
By Technical Paper Link - 28 May, 2024 - Comments: 0

A new technical paper titled "High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C" was published by researchers at MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of Engineering and Technology. Abstract "This Letter reports the stability of regrown and alloyed Ohmic contacts to A... » read more

Using Palladium To Address Contact Issues Of Buried Oxide Thin Film Transistors
By Technical Paper Link - 09 Apr, 2024 - Comments: 0

A new technical paper titled "Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway" was published by researchers at Tokyo Institute of Technology and National Institute for Materials Science (NIMS). Abstract "Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures... » read more

Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance (ROHM)
By Technical Paper Link - 06 Oct, 2023 - Comments: 0

A technical paper titled “Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance” was published by researchers at ROHM Company. Abstract: "The intrinsic gate resistance ( Rg_in) , which is a novel resistance factor embedded in transistors, was determined for silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFE... » read more

Reducing Contact Resistance in Developing Transistors Based On 2D Materials
By Technical Paper Link - 10 Mar, 2023 - Comments: 0

A new technical paper titled "WS2 Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study" was published by researchers at National Yang Ming Chiao Tung University. Abstract "Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles ... » read more

Modeling and Thermal Analysis of 3DIC
By Technical Paper Link - 13 Feb, 2023 - Comments: 0

A new technical paper titled "Heat transfer in a multi-layered semiconductor device with spatially-varying thermal contact resistance between layers" was published by researchers at UT Arlington. "This work presents a theoretical model to determine the steady state temperature distribution in a general M-layer structure with spatial variation in thermal contact resistance between adjacent la... » read more

Functional-Engineered MXene Transistors
By Technical Paper Link - 28 Sep, 2022 - Comments: 0

A new technical paper titled "High-throughput design of functional-engineered MXene transistors with low-resistive contacts" was published by researchers at Indian Institute of Science (IISc) Bangalore. Abstract (partial): "Two-dimensional material-based transistors are being extensively investigated for CMOS (complementary metal oxide semiconductor) technology extension; nevertheless, down... » read more

Reporting and Benchmarking Process For A 2D Semiconductor FET
By Technical Paper Link - 29 Jul, 2022 - Comments: 0

New research paper titled "How to Report and Benchmark Emerging Field-Effect Transistors" was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking University, NYU, Imec, RWTH Aachen, and others. "Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and compar... » read more

Pinpointing the Dominant Component of Contact Resistance to Atomically Thin Semiconductors
By Technical Paper Link - 08 Mar, 2022 - Comments: 0

Abstract "Achieving good electrical contacts is one of the major challenges in realizing devices based on atomically thin two-dimensional (2D) semiconductors. Several studies have examined this hurdle, but a universal understanding of the contact resistance and an underlying approach to its reduction are currently lacking. In this work we expose the shortcomings of the classical contact resist... » read more

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