tag: DRAM

New Nodes, Materials, Memories
By Ed Sperling - 15 Feb, 2018 - Comments: 0

Ellie Yieh, vice president and general manager of Advanced Product Technology Development at [getentity id="22817" e_name="Applied Materials"], and head of the company's Maydan Technology Center, sat down with Semiconductor Engineering to talk about challenges, changes and solutions at advanced nodes and with new applications. What follows are excerpts of that conversation. SE: How far can w... » read more

ATE Tailwind For 2018?
By Jeff Dorsch - 05 Feb, 2018 - Comments: 0

The automatic test equipment market enjoyed a record sales year during 2017, and there are indications that the good times will continue this year. Forecasters are predicting another robust year for sales of DRAMs and NAND flash memory devices, especially 3D NAND. That will drive demand for memory test equipment to keep up. Frost & Sullivan predicts semiconductor test equipment will h... » read more

Memory Market: Will History Repeat Itself?
By Joanne Itow - 24 Jan, 2018 - Comments: 0

While updating the Semico Fab Database and capital investment projections for 2018, China's investment in memory capacity sparked a lot of discussion at our weekly Semico roundtable. Will China's investment in memory production capacity be successful, or will it just ruin the party for all memory players? Here are some of the highlights of our discussion. Additional data and insights are includ... » read more

E-beam Inspection Makes Inroads
By Mark LaPedus - 18 Jan, 2018 - Comments: 4

E-beam inspection is gaining traction in critical areas in fab production as it is becoming more difficult to find tiny defects with traditional methods at advanced nodes. Applied Materials, ASML/HMI and others are developing new e-beam inspection tools and/or techniques to solve some of the more difficult defect issues in the fab. [gettech id="31057" t_name="E-beam"] inspection is one of tw... » read more

Predictions: Manufacturing, Devices And Companies
By Brian Bailey - 18 Jan, 2018 - Comments: 0

Some predictions are just wishful thinking, but most of these are a lot more thoughtful. They project what needs to happen for various markets or products to become successful. Those far reaching predictions may not fully happen within 2018, but we give everyone the chance to note the progress made towards their predictions at the end of the year. (See Reflection On 2017: Design And EDA and Man... » read more

Data Buffering’s Role Grows
By Ann Mutschler - 17 Jan, 2018 - Comments: 0

Data buffering is gaining ground as a way to speed up the processing of increasingly large quantities of data. In simple terms, a data buffer is an area of physical [getkc id="22" kc_name="memory"] storage that temporarily stores data while it is being moved from one place to another. This becomes increasingly necessary in data centers, autonomous vehicles, and for [getkc id="305" kc_name=... » read more

Machine Learning’s Growing Divide
By Brian Bailey - 11 Jan, 2018 - Comments: 7

[getkc id="305" kc_name="Machine learning"] is one of the hottest areas of development, but most of the attention so far has focused on the cloud, algorithms and GPUs. For the semiconductor industry, the real opportunity is in optimizing and packaging solutions into usable forms, such as within the automotive industry or for battery-operated consumer or [getkc id="76" kc_name="IoT"] products. ... » read more

A New Memory Contender?
By Mark LaPedus - 02 Jan, 2018 - Comments: 1

Momentum is building for a new class of ferroelectric memories that could alter the next-generation memory landscape. Generally, ferroelectrics are associated with a memory type called ferroelectric RAMs (FRAMs). Rolled out by several vendors in the late 1990s, FRAMs are low-power, nonvolatile devices, but they are also limited to niche applications and unable to scale beyond 130nm. While... » read more

Using Run-Time Reverse-Engineering to Optimize DRAM Refresh
By Technical Paper Link - 31 Dec, 2017 - Comments: 0

Abstract: "The overhead of DRAM refresh is increasing with each density generation. To help offset some of this overhead, JEDEC designed the modern Auto-Refresh command with a highly optimized architecture internal to the DRAM---an architecture that violates the timing rules external controllers must observe and obey during normal operation. Numerous refresh-reduction schemes manually refresh ... » read more

Foundry Challenges in 2018
By Mark LaPedus - 27 Dec, 2017 - Comments: 6

The silicon foundry business is expected to see steady growth in 2018, but that growth will come with several challenges. On the leading edge, GlobalFoundries, Intel, Samsung and TSMC are migrating from the 16nm/14nm to the 10nm/7nm logic nodes. Intel already has encountered some difficulties, as the chip giant recently pushed out the volume ramp of its new 10nm process from the second half ... » read more

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