Dealing With Resistance In Chips


Chipmakers continue to scale the transistor at advanced nodes, but they are struggling to maintain the same pace with the other two critical parts of the device—the contacts and interconnects. That’s beginning to change, however. In fact, at 10nm/7nm, chipmakers are introducing new topologies and materials such as cobalt, which promises to boost the performance and reduce unwanted resist... » read more

Litho Options For Panel Fan-out


Several packaging houses are inching closer to production of panel-level fan-out packaging, a next-generation technology that promises to reduce the cost of today’s fan-out packages. In fact, ASE, Nepes, Samsung and others already have installed the equipment in their panel-level fan-out lines with production slated for 2018 or so. But behind the scenes, panel-level packaging houses contin... » read more

Cheaper Fan-Outs Ahead


Packaging houses continue to ramp up fan-out wafer-level packages in the market, but customers want lower cost fan-out products for a broader range of applications, such as consumer, RF and smartphones. So in R&D, the industry for some time has been developing next-generation fan-out using a panel-level format, a technology that could potentially lower the cost of fan-out. But there are ... » read more

Electroplating IC Packages


The electrochemical deposition (ECD) equipment market for IC packaging is heating up as 2.5D, 3D and fan-out technologies begin to ramp. [getentity id="22817" e_name="Applied Materials"]  recently rolled out an ECD system for IC packaging. In addition, Lam Research, TEL and others compete in the growing but competitive ECD equipment market for packaging. ECD—sometimes referred to as pl... » read more

The Upside Of Through-Silicon Vias


Through-silicon vias (TSVs) for 3D integration are superficially similar to damascene copper interconnects for integrated circuits. Both etch the via, into either silicon or a dielectric, line it with a barrier against copper diffusion, then deposit a seed layer prior to filling the via with copper using some form of aqueous deposition. In both processes, the integrity of the diffusion barrier ... » read more