Patterning With EUV Lithography Without Photoresists


A technical paper titled “Resistless EUV lithography: photon-induced oxide patterning on silicon” was published by researchers at Paul Scherrer Institute, University College London, ETH Zürich, and EPFL. Abstract: "In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading ... » read more

EUV Challenges And Unknowns At 3nm and Below


The chip industry is preparing for the next phase of extreme ultraviolet (EUV) lithography at 3nm and beyond, but the challenges and unknowns continue to pile up. In R&D, vendors are working on an assortment of new EUV technologies, such as scanners, resists, and masks. These will be necessary to reach future process nodes, but they are more complex and expensive than the current EUV pro... » read more

Litho Options Sparse After 10nm


Leading-edge foundries are ramping up their 16nm/14nm logic processes, with 10nm and 7nm in R&D. Barring a major breakthrough in [getkc id="80" comment="lithography"], chipmakers will use 193nm immersion and multiple patterning for both 16nm/14nm and 10nm. So now, chipmakers are focusing on the lithography options for 7nm. As before, the options include the usual suspects—[gettech id="... » read more

Billions And Billions Invested


Over the years, next-generation [getkc id="80" kc_name="lithography"] (NGL) has suffered various setbacks and delays. But until recently, the industry basically shrugged its shoulders and expressed relatively little anxiety about the NGL delays. After all, optical lithography was doing the job in the fab and NGL would eventually materialize. Today, however, the mood is different. In fact, th... » read more

EUV Reaches A Crossroads


[gettech id="31045" comment="EUV"] (EUV) [getkc id="80" comment="lithography"] is at a crossroads. 2014 represents a critical year for the technology. In fact, it may answer a pressing question about EUV: Does it work or not? It’s too early to make that determination right now, but there are more uncertainties than ever for the oft-delayed technology. Originally aimed for the 65nm node in... » read more

Waiting For Next-Generation Lithography


Nearly 30 years ago, optical lithography was supposed to hit the wall at the magical 1 micron barrier, prompting the need for a new patterning technology such as direct-write electron beam and X-ray lithography. At that time, however, the industry was able to push optical lithography for volume chip production at the 1-micron node and beyond. This, in turn, effectively killed direct-write e-... » read more

Optical Lithography, Take Two


By Mark LaPedus It’s the worst-kept secret in the industry. Extreme ultraviolet (EUV) lithography has missed the initial stages of the 10nm logic and 1xnm NAND flash nodes. Chipmakers hope to insert EUV by the latter stages of 10nm or by 7nm, but vendors are not counting on EUV in the near term and are preparing their back-up plans. Barring a breakthrough with EUV or other technology, IC ... » read more