Preparing For Ferroelectric Devices

By Katherine Derbyshire - 02 Oct, 2024 - Comments: 0

The discovery of ferroelectricity in materials that are compatible with integrated circuit manufacturing has sparked a wave of interest in ferroelectric devices. Ferroelectrics are materials with a permanent polarization, the direction of which can be switched by an applied field. This polarization can be used to raise or lower the threshold voltage of a transistor, as in FeFETs, or it can c... » read more

Ferroelectric Memory-Based IMC for ML Workloads

By Technical Paper Link - 21 May, 2024 - Comments: 0

A new technical paper titled "Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads" was published by researchers at Purdue University. Abstract "This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate mach... » read more

Suitability of FeFET-Based CAM Cells For Storage-Class Memory, Under Junction Temperature Variations

By Technical Paper Link - 15 Jan, 2024 - Comments: 0

A technical paper titled “Ferroelectric Field Effect Transistors–Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility” was published by researchers at Fraunhofer Institute for Photonic Microsystems (IPMS) and Indian Institute of Technology Madras (IIT Madras). Abstract: "Hafnium oxide (HfO2)-based ferroelectric fiel... » read more

Ferroelectric Memories Answer Call For Non-Volatile Alternatives

By Katherine Derbyshire - 21 Sep, 2023 - Comments: 0

As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and the stability of flash memory. Changing the polarization of ferroelectric domains is extremely fast, and the polarization remains stable without power for years, if not decades. FeFETs, one of ... » read more

A Search Framework That Optimizes Hybrid-Device IMC Architectures For DNNs, Using Chiplets

By Technical Paper Link - 08 Aug, 2023 - Comments: 0

A technical paper titled “HyDe: A Hybrid PCM/FeFET/SRAM Device-search for Optimizing Area and Energy-efficiencies in Analog IMC Platforms” was published by researchers at Yale University. Abstract: "Today, there are a plethora of In-Memory Computing (IMC) devices- SRAMs, PCMs & FeFETs, that emulate convolutions on crossbar-arrays with high throughput. Each IMC device offers its own pr... » read more

Large Area Process For Atomically Thin 2D Semiconductor, Using Scalable ALD

By Technical Paper Link - 30 Mar, 2023 - Comments: 0

A new technical paper titled "Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition process" by researchers at the University of Southampton, LMU Munich, and VTT Technical Research Centre of Finland. Abstract: "This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required... » read more

Ferroelectric Memories: The Middle Ground

By Katherine Derbyshire - 19 Jan, 2023 - Comments: 0

The first article in this series considered the use of ferroelectrics to improve subthreshold swing behavior in logic transistors. The prospects for ferroelectrics in logic applications are uncertain, but ferroelectric memories have clear advantages. The two most common commercial memories lie at opposite ends of a spectrum. DRAM is fast, but requires constant power to maintain its informat... » read more

Multi-Bit In-Memory Computing System for HDC using FeFETs, Achieving SW-Equivalent-Accuracies

By Technical Paper Link - 11 Nov, 2022 - Comments: 0

A new technical paper titled "Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing" by researchers at University of Notre Dame, Fraunhofer Institute for Photonic Microsystems, University of California Irvine, and Technische Universität Dresden. "We present a multi-bit IMC system for HDC using ferroelectric field-effect transistor... » read more

Week In Review: Manufacturing, Test

By Linda Christensen - 15 Apr, 2022 - Comments: 0

Photonic Chips Go Big In Europe PhotonDelta, a collaborative end-to-end supply chain for the application of photonics chips, secured €1.1 billion in conditional funding for a six-year initiative. Investments from the Netherlands government and other organizations “will be used to build 200 startups, scale up production, create new applications for photonic chips, and develop infrastructure... » read more

Ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing

By Technical Paper Link - 21 Apr, 2021 - Comments: 0

Source: AIP Applied Physics Letters, published 2/4/2021. Evelyn T. Breyer1, Halid Mulaosmanovic1, Thomas Mikolajick1,2, and Stefan Slesazeck1 1Nanoelectronic Materials Laboratory (NaMLab) gGmbH, 01187 Dresden, Germany 2Chair of Nanoelectronics, TU Dresden, 01187 Dresden, Germany Technical paper link is here » read more

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