MAC Operation on 28nm High-k Metal Gate FeFET-based Memory Array with ADC (Fraunhofer IPMS/GF)


A technical paper titled "Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array" was published by researchers at Fraunhofer IPMS and GlobalFoundries. Abstract "This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide Semiconductor (CMOS) and ferroelectric fi... » read more

Stabilizing A Hafnium Oxide-Based Thin Film When Sandwiched Between A Metal Substrate And An Electrode


A technical paper titled "Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films" was published by researchers at University of Virginia, Brown University, Sandia National Labs, and Oak Ridge National Lab. Funding was given by U.S. DOE's 3D Ferroelectric Microelectronics Energy Frontier Research Center and the SRC. "This study ... » read more

Multi-Bit In-Memory Computing System for HDC using FeFETs, Achieving SW-Equivalent-Accuracies


A new technical paper titled "Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing" by researchers at University of Notre Dame, Fraunhofer Institute for Photonic Microsystems, University of California Irvine, and Technische Universität Dresden. "We present a multi-bit IMC system for HDC using ferroelectric field-effect transistor... » read more

Neuromorphic Computing: Challenges, Opportunities Including Materials, Algorithms, Devices & Ethics


This new research paper titled "2022 roadmap on neuromorphic computing and engineering" is from numerous researchers at Technical University of Denmark, Instituto de Microelectrónica de Sevilla, CSIC, University of Seville, and many others. Partial Abstract: "The aim of this roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the chall... » read more

Exploring far-from-equilibrium ultrafast polarization control in ferroelectric oxides with excited-state neural network quantum molecular dynamics


New academic paper out of USC Viterbi School of Engineering: Abstract "Ferroelectric materials exhibit a rich range of complex polar topologies, but their study under far-from-equilibrium optical excitation has been largely unexplored because of the difficulty in modeling the multiple spatiotemporal scales involved quantum-mechanically. To study optical excitation at spatiotemporal scales w... » read more

Nonvolatile Capacitive Crossbar Array for In-Memory Computing


Abstract "Conventional resistive crossbar array for in-memory computing suffers from high static current/power, serious IR drop, and sneak paths. In contrast, the “capacitive” crossbar array that harnesses transient current and charge transfer is gaining attention as it 1) only consumes dynamic power, 2) has no DC sneak paths and avoids severe IR drop (thus, selector-free), and 3) can be f... » read more

A Ferroelectric Semiconductor Field-Effect Transistor


Abstract: "Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use in non-volatile memory technology, but they suffer from short retention times, which limits their wider application. Here, we report a ferroelectric sem... » read more

Newer posts →