Summary Of The Progress In Beta-Phase Gallium Oxide Field-Effect Transistors


A technical paper titled “Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications” was published by researchers at George Mason University and National Institute of Standards and Technology (NIST). Abstract: "Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is exp... » read more

How Different Metal Depositions Affect The Structure And Charge Transport Of 9-A Graphene Nanoribbons


A technical paper titled “Contact engineering for graphene nanoribbon devices” was published by researchers at University of Arizona, Swiss Federal Labs for Materials Science and Technology, University of California Berkeley, Stanford University, SRM Institute of Science and Technology, Texas A&M University, Lawrence Berkeley National Laboratory (LBNL), Max Planck Institute for Polymer... » read more

Friction Between Single Layer Graphene And An Atomic Force Microscope Tip


A technical paper titled “Dynamically tuning friction at the graphene interface using the field effect” was published by researchers at University of Illinois Urbana-Champaign and University of California Irvine. Abstract: "Dynamically controlling friction in micro- and nanoscale devices is possible using applied electrical bias between contacting surfaces, but this can also induce unwant... » read more

Reporting and Benchmarking Process For A 2D Semiconductor FET


New research paper titled "How to Report and Benchmark Emerging Field-Effect Transistors" was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking University, NYU, Imec, RWTH Aachen, and others. "Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and compar... » read more