Designing SoC Power Networks

By Brian Bailey - 11 Aug, 2016 - Comments: 0

Designing a power network for a complex SoC is becoming critical for the success of the product, but most chips are still using old techniques that are ill-suited to the latest fabrication technologies, resulting in an expensive, overdesigned product. Not only is the power network as designed too large, but this has several knock-on effects that impact area, timing and power. In the first pa... » read more

Atomic Layer Etch Heats Up

By Mark LaPedus - 29 Jun, 2016 - Comments: 0

The atomic layer etch (ALE) market is starting to heat up as chipmakers push to 10nm and beyond. ALE is a promising next-generation etch technology that has been in R&D for the last several years, but until now there has been little or no need to use it. Unlike conventional etch tools, which remove materials on a continuous basis, ALE promises to selectively and precisely remove targete... » read more

Interconnect Challenges Rising

By Mark LaPedus - 27 Jun, 2016 - Comments: 1

Chipmakers are ramping up their 14nm finFET processes, with 10nm and 7nm slated to ship possibly later this year or next. At 10nm and beyond, IC vendors are determined to scale the two main parts of the [getkc id="185" kc_name="finFET"] structure—the transistor and interconnects. Generally, transistor scaling will remain challenging at advanced nodes. And on top of that, the interconnects ... » read more

Next Challenge: Contact Resistance

By Mark LaPedus - 23 Jun, 2016 - Comments: 0

In chip scaling, there is no shortage of challenges. Scaling the finFET transistor and the interconnects are the biggest challenges for current and future devices. But now, there is another part of the device that’s becoming an issue—the contact. Typically, the contact doesn’t get that much attention, but the industry is beginning to worry about the resistance in the contacts, or conta... » read more

DAC Day Four: Excitement And Risk

By Brian Bailey - 09 Jun, 2016 - Comments: 0

One thing that was new to DAC this year, was an art exhibit. These were pieces of artwork related to our industry, such as chip plots, or more abstract ideas based on design data or analyses. They received many more entrants than their wildest dreams and had to choose a winner from over 80 pieces, but the grand prize was won by a 3D model of a finFET by David Freid of Coventor. This piece was ... » read more

DAC Day Two: Down To Business

By Brian Bailey - 07 Jun, 2016 - Comments: 0

DAC day two started with a breakfast presentation put on by Synopsys which included guests from ARM, TSMC and HiSilicon. It was titled Collaborating to Enable Design with the latest processors and finFET processes. Collaboration is a word that we hear increasingly when talking about the advanced nodes and today we are truly at the point where one company cannot do it all. Ron Moore, VP of ma... » read more

Executive Insight: K. Charles Janac

By Ed Sperling - 24 May, 2016 - Comments: 0

K. Charles Janac, chairman and CEO of Arteris, sat down with Semiconductor Engineering to talk about what's changing in the automotive market, the impact of big data, and heterogeneous cache coherency. What follows are excerpts of that discussion. SE: What are the big changes you're seeing in semiconductor design? Janac: There are a lot of changes right now. Mobility is slowing down and b... » read more

The Week In Review: Design

By Jesse Allen - 20 May, 2016 - Comments: 1

Acquisitions ARM acquired embedded computer vision and imaging technology company [getentity id="22917" comment="Apical"] for $350 million in cash. According to ARM, the company's technology has been utilized in more than 1.5 billion smartphones and in about 300 million other consumer and industrial devices. Synopsys acquired [getentity id="22916" comment="Simpleware"], a provider of soft... » read more

7nm Fab Challenges

By Mark LaPedus - 21 Apr, 2016 - Comments: 3

Leading-edge foundry vendors have made the challenging transition from traditional planar processes into the finFET transistor era. The first [getkc id="185" kc_name="finFETs"] were based on the 22nm node, and now the industry is ramping up 16nm/14nm technologies. Going forward, the question is how far the finFET can be scaled. In fact, 10nm finFETs from Samsung are expected to ramp by ye... » read more

Insider’s Guide To Fab Technology

By Mark LaPedus - 21 Apr, 2016 - Comments: 0

Semiconductor Engineering sat down to discuss fab technology with Matt Paggi, vice president of advanced technology development at GlobalFoundries. What follows are excerpts of that conversation. SE: What’s driving demand for semiconductors today? Paggi: You are aware of what the worldwide semiconductor revenue growth is this year. There are peaks and valleys in the worldwide semiconduc... » read more

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Designing SoC Power Networks

Atomic Layer Etch Heats Up

Interconnect Challenges Rising

Next Challenge: Contact Resistance

DAC Day Four: Excitement And Risk

DAC Day Two: Down To Business

Executive Insight: K. Charles Janac

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