tag: finFETs

Analyzing The Integrity Of Power
By Ann Mutschler - 14 Apr, 2016 - Comments: 0

Power analysis is shifting much earlier in the chip design process, with power emerging as the top design constraint at advanced process nodes. As engineering teams pack more functionality and content into bigger and more complex chips, they are having to deal with more complex interactions that affect everything from power to its impact on signal integrity and long-term reliability. That, i... » read more

Foundation IP For 7nm FinFETs: Design And Implementation
By Synopsys - 13 Apr, 2016 - Comments: 0

Learn about the challenges of IP design and implementation for 7nm FinFETs. Along with the performance and area benefits that the node brings, designers must understand the significant technical challenges stemming from increasing variability associated with tighter pitches and more complex lithography steps. Design for variability and reliability considerations will require comprehensive model... » read more

Pain Points At 7nm
By Ed Sperling - 24 Mar, 2016 - Comments: 3

Early work has begun on 7nm. Process technology has progressed to the point where IP and tools are being qualified. There is still a long way to go. But as companies begin engaging with foundries on this process node—[getentity id="22586" comment="TSMC"] is talking publicly about it, but [getentity id="22846" e_name="Intel"], [getentity id="22819" comment="GlobalFoundries"] and [getentity ... » read more

Timing Is Everything
By Ed Sperling - 17 Mar, 2016 - Comments: 0

It's easy to look back on companies or products that missed the market because they were too early. Remember the Eo? The brick-like personal digital assistant that AT&T introduced in 1993 had an antenna that hinted at 4G connectivity. Unfortunately, there was no 4G available at the time, so it was just an extra wire. (Check out the video of the tablet version here.) The EO 440 Personal... » read more

Reducing Post-Placement Leakage With Stress-Enhanced Fill Cells
By Valeriy Sukharev - 17 Mar, 2016 - Comments: 0

By Valeriy Sukharev, Jun-Ho Choy, Armen Kteyan and Henrik Hovsepyan As downward scaling of transistors continues, optimizing power consumption for mobile devices is a major concern. Power consumption consists of two components: dynamic and static. Dynamic (active) power is used while the chip is performing various functions, while static (leakage) power is consumed by leakage current (Figure... » read more

New Memory Approaches And Issues
By Ed Sperling - 14 Mar, 2016 - Comments: 1

New memory types and approaches are being developed and tested as DRAM and Moore's Law both run out of steam, adding greatly to the confusion of what comes next and how that will affect chip designs. What fits where in the memory hierarchy is becoming less clear as the semiconductor industry grapples with these changes. New architectures, such as [getkc id="202" kc_name="fan-outs"] and [getk... » read more

7nm Lithography Choices
By Mark LaPedus - 07 Mar, 2016 - Comments: 2

Chipmakers are ramping up their 16nm/14nm logic processes, with 10nm expected to move into early production later this year. Barring a major breakthrough in lithography, chipmakers are using today’s 193nm immersion and multiple patterning for both 16/14nm and 10nm. Now, chipmakers are focusing on the lithography options for 7nm. For this, they hope to use a combination of two technologies ... » read more

The Big Shift
By Ed Sperling - 18 Feb, 2016 - Comments: 0

The number of chipmakers that truly can differentiate their products by moving to the next process node is falling, and that pool will continue to shrink even further over the next few years. Processor companies such as Intel and IBM always will benefit from scaling and architectural changes. So will GPU companies such as Nvidia, and FPGA vendors such as Xilinx, Microsemi and Altera (now par... » read more

1xnm DRAM Challenges
By Mark LaPedus - 18 Feb, 2016 - Comments: 3

At a recent event, Samsung presented a paper that described how the company plans to extend today’s planar DRAMs down to 20nm and beyond. This is an amazing feat. Until very recently, most engineers believed DRAMs would stop scaling at 20nm or so. Instead, Samsung is ramping up the world’s most advanced DRAMs—a line of 20nm parts—with plans to go even further. Micron and SK Hynix soo... » read more

When And How Should I Color My DP layout?
By David Abercrombie - 18 Feb, 2016 - Comments: 0

Designers working with advanced process technologies that require double patterning often find themselves puzzling over the best way to setup or optimize their design flows to ensure their layouts can be decomposed without time-wasting mistakes. Because manual coloring can be challenging even for experienced engineers, many prefer to use automated coloring solutions. But when is the best time a... » read more

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