Chip Industry Technical Paper Roundup: April 30


These new technical papers were recently added to Semiconductor Engineering’s library. [table id=222 /] Find more technical papers here. » read more

Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition (Penn State, et al.)


A new technical paper titled "In-Operando Spatiotemporal Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition" was published by researchers at Pennsylvania State University, Cornell University, Argonne National Lab, Georgia Tech and Forschungsverbund Berlin. Abstract "The drive toward non-von Neumann device architectures has led to an intense focus on ins... » read more

Manufacturing Bits: Sept. 3


Modeling SiC defects The Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ PAN) has developed a model that reveals the nature of crystal defects in silicon carbide (SiC). Defectivity is an issue for SiC, a compound semiconductor material based on silicon and carbon. Today, SiC is used to make specialized power semiconductors for high-voltage applications, such as electric ... » read more