tag: Fractilia

Big Changes Ahead For Photomask Technology
By Gregory Haley - 19 Oct, 2023 - Comments: 0

The move to curvilinear shapes on photomasks is gaining steam after years of promise as a way of improving yield, lowering defectivity, and reducing wasted space on a die — all of which are essential for both continued scaling and improved reliability in semiconductors. Interest in this approach ran high at this year's SPIE Photomask Technology + EUV Lithography Conference. Put simply, cur... » read more

Directed Self-Assembly Finds Its Footing
By Gregory Haley - 17 Aug, 2023 - Comments: 0

Ten years ago, when the industry was struggling to deliver EUV lithography, directed self-assembly (DSA) roared to the forefront of research and development for virtually every manufacturer determined to extend the limits of 193i. It was the hot topic at of the 2012 SPIE Advanced Lithography Conference, with one attendee from Applied Materials comparing its potential to disrupt the industry to ... » read more

Governments Begin To Shape Metrology Directions
By Gregory Haley - 11 Jul, 2023 - Comments: 0

Disruptions to the global semiconductor supply chain caused by the COVID-19 pandemic had a severe impact in nearly every sector of the worldwide economy, and especially the worldwide semiconductor market. Due to a shortage of chips, the global auto industry alone suffered a $210 billion loss in 2021, accompanied by a 7.7 million unit production drop, according to AlixPartners, a global consulti... » read more

Managing Yield With EUV Lithography And Stochastics
By Katherine Derbyshire - 18 May, 2023 - Comments: 1

Identifying issues that actually affect yield is becoming more critical and more difficult at advanced nodes, but there is progress. Although they are closely related, yield management and process control are not the same. Yield management seeks to maximize the number of functioning devices at the end of the line. Process control focuses on keeping each individual device layer within its des... » read more

Challenges Grow For CD-SEMs At 5nm And Beyond
By Gregory Haley - 11 Apr, 2023 - Comments: 1

CD-SEM, the workhorse metrology tool used by fabs for process control, is facing big challenges at 5nm and below. Traditionally, CD-SEM imaging has relied on a limited number of image frames for averaging, which is necessary both to maintain throughput speeds and to minimize sample damage from the electron beam itself. As dimensions get smaller, these limitations result in higher levels of n... » read more

Tech Forecast: Fab Processes To Watch Through 2040
By Laura Peters - 16 Mar, 2023 - Comments: 0

The massive proliferation of semiconductors in more markets, and more applications within those markets, is expected to propel the industry to more than $1 trillion by 2030. But over the next 17 years, semiconductors will reach well beyond the numbers, changing the way people work, how they communicate, and how they measure and monitor their health and well-being. Chips will be the enabling ... » read more

New Challenges Emerge With High-NA EUV
By Katherine Derbyshire - 16 Mar, 2023 - Comments: 3

High numerical aperture EUV exposure systems are coming — as soon as 2025 by some estimates. Though certainly a less profound change than the introduction of extreme ultraviolet lithography, high-NA lithography still brings a new set of challenges for photoresists and related materials. With a higher numerical aperture, photons strike the wafer at a shallower angle. That requires thinner p... » read more

Week In Review: Manufacturing, Test
By Gregory Haley - 24 Feb, 2023 - Comments: 0

The U.S. is aiming for the creation of two new advanced semiconductor manufacturing facilities with “a robust supplier ecosystem” supported by the $52.7 billion CHIPS Act. Included is an $11 billion investment in semiconductor research and development, along with the creation of a new public-private partnership called the National Semiconductor Technology Center. This follows more than a do... » read more

Metrology Of Thin Resist For High NA EUVL
By Nova - 16 Nov, 2022 - Comments: 0

One of the many constrains of high numerical aperture extreme ultraviolet lithography (High NA EUVL) is related to resist thickness. In fact, one of the consequences of moving from current 0.33NA to 0.55NA (high NA) is the depth of focus (DOF) reduction. In addition, as the resist feature lines shrink down to 8nm half pitch, it is essential to limit the aspect ratio to avoid pattern collapse. T... » read more

How Overlay Keeps Pace With EUV Patterning
By Laura Peters - 09 Aug, 2022 - Comments: 1

Overlay metrology tools improve accuracy while delivering acceptable throughput, addressing competing requirements in increasingly complex devices. In a race that never ends, on-product overlay tolerances for leading-edge devices are shrinking rapidly. They are in the single-digit nanometer range for the 3nm generation (22nm metal pitch) devices. New overlay targets, machine learning, and im... » read more

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