Wafer Cleaning Becomes Key Challenge In Manufacturing 3D Structures


Wafer cleaning, once a rather mundane task as simple as dipping wafers in cleaning fluid, is emerging as one of the top major engineering challenges for manufacturing GAA FETs and 3D-ICs. With these new 3D structures — some on the horizon but some already in high-volume manufacturing — semiconductor wafer equipment and materials suppliers in the wet cleaning business are at the epicenter... » read more

Designing For Thermal


Heat has emerged as a major concern for semiconductors in every form factor, from digital watches to data centers, and it is becoming more of a problem at advanced nodes and in advanced packages where that heat is especially difficult to dissipate. Temperatures at the base of finFETs and GAA FETs can differ from those at the top of the transistor structures. They also can vary depending on h... » read more

Modeling Effects Of Fluctuation Sources On Electrical Characteristics Of GAA Si NS MOSFETs Using ANN-Based ML


Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs." "This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF... » read more

Big Changes In Architectures, Transistors, Materials


Chipmakers are gearing up for fundamental changes in architectures, materials, and basic structures like transistors and interconnects. The net result will be more process steps, increased complexity for each of those steps, and rising costs across the board. At the leading-edge, finFETs will run out of steam somewhere after the 3nm (30 angstrom) node. The three foundries still working at th... » read more

Synchrotron S-ray Diffraction-based Non-destructive Nanoscale Mapping of Si/SiGe Nanosheets for GAA structures


New research paper titled "Mapping of the mechanical response in Si/SiGe nanosheet device geometries" from researchers at IBM T.J. Watson Research Center and Brookhaven National Laboratory. Sponsored by U.S. DOE. Abstract "The performance of next-generation, nanoelectronic devices relies on a precise understanding of strain within the constituent materials. However, the increased flexibilit... » read more

Highly Selective Etch Rolls Out For Next-Gen Chips


Several etch vendors are starting to ship next-generation selective etch tools, paving the way for new memory and logic devices. Applied Materials was the first vendor to ship a next-gen selective etch system, sometimes called highly-selective etch, in 2016. Now, Lam Research, TEL, and others are shipping tools with highly-selective etch capabilities, in preparation for futuristic devices su... » read more

Transistors Reach Tipping Point At 3nm


The semiconductor industry is making its first major change in a new transistor type in more than a decade, moving toward a next-generation structure called gate-all-around (GAA) FETs. Although GAA transistors have yet to ship, many industry experts are wondering how long this technology will deliver — and what new architecture will take over from there. Barring major delays, today’s GAA... » read more

Wrestling With Analog At 3nm


Analog engineers are facing big challenges at 3nm, forcing them to come up with creative solutions to a widening set of issues at each new process node. Still, these problems must be addressed, because no digital chip will work without at least some analog circuitry. As fabrication technologies shrink, digital logic improves in some combination of power, performance, and area. The process te... » read more

Angstrom-Level Measurements With AFMs


Competition is heating up in the atomic force microscopy (AFM) market, where several vendors are shipping new AFM systems that address various metrology challenges in packaging, semiconductors and other fields. AFM, a small but growing field that has been under the radar, involves a standalone system that provides surface measurements on structures down to the angstrom level. (1 angstrom = 0... » read more

Impact Of GAA Transistors At 3/2nm


The chip industry is poised for another change in transistor structure as gate-all-around (GAA) FETs replace finFETs at 3nm and below, creating a new set of challenges for design teams that will need to be fully understood and addressed. GAA FETs are considered an evolutionary step from finFETs, but the impact on design flows and tools is still expected to be significant. GAA FETs will offer... » read more

← Older posts Newer posts →