tag: gallium nitride

48V Applications Drive Power IC Package Options
By Bill Schweber - 21 Jan, 2021 - Comments: 1

The manufacturing process and die get most of the attention, but the packaging plays an important part in enabling and limiting performance, manufacturability, particularly when it comes to reliability of power devices. Given the wide range of underlying semiconductor power-device technologies — “basic” silicon, wide-bandgap silicon carbide (SiC) and gallium nitride (GaN), power levels... » read more

Mobility And 5G Drive Adoption Of New Materials For Power Devices
By Serena Brischetto - 21 Jan, 2021 - Comments: 0

Electric mobility, renewable energy, and other technology innovations like IoT, 5G, smart manufacturing, and robotics all require reliability, efficiency, and compact power systems, fueling the adoption of silicon carbide (SiC) and gallium nitride (GaN) to support lower voltages in significantly smaller devices. But chip designers must overcome the technological and economical challenges of int... » read more

Power Amp Wars Begin For 5G
By Mark LaPedus - 24 Aug, 2020 - Comments: 2

Demand is increasing for power amplifier chips and other RF devices for 5G base stations, setting the stage for a showdown among different companies and technologies. The power amplifier device is a key component that boosts the RF power signals in base stations. It's based on two competitive technologies, silicon-based LDMOS or RF gallium nitride (GaN). GaN, a III-V technology, outperforms ... » read more

Beyond-Line-Of-Sight Troposcatter Communications Primer
By Kasyap Patel - 16 Jul, 2020 - Comments: 0

Though tropospheric scatter (troposcatter, or tropo) communications technology has existed since the 1950s and was used by the U.S. military from 1960 to 2002, this legacy technology is being revitalized in the wake of concerns around the reliability of tactical satellite communications (Satcom). For several decades, satellites were a reliable and secure method of communications that provided s... » read more

China Speeds Up Advanced Chip Development
By Mark LaPedus - 22 Jun, 2020 - Comments: 18

China is accelerating its efforts to advance its domestic semiconductor industry, amid ongoing trade tensions with the West, in hopes of becoming more self-sufficient. The country is still behind in IC technology and is nowhere close to being self-reliant, but it is making noticeable progress. Until recently, China’s domestic chipmakers were stuck with mature foundry processes with no pres... » read more

Improving Reliability For GaN And SiC
By Mark LaPedus - 18 Jun, 2020 - Comments: 2

Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in systems, they must prove to be reliable. As with previous products, suppliers are quick to point out that the new devices are reliable, although there are some issues that can occasionally surface... » read more

Manufacturing Bits: June 16
By Mark LaPedus - 16 Jun, 2020 - Comments: 0

GaN power modules Gallium-nitride (GaN) devices are emerging in several markets, such as power semiconductors and RF. GaN, a binary III-V compound, is a wide-bandgap technology, meaning it is faster and more efficient than silicon-based devices. GaN has 10 times the breakdown field strength with double the electron mobility than silicon. Generally, some GaN vendors don’t use a traditio... » read more

Power/Performance Bits: April 14
By Jesse Allen - 14 Apr, 2020 - Comments: 0

Undoped polymer ink Researchers at Linköping University, Chalmers University of Technology, University of Washington, University of Cologne, Chiba University, and Yunnan University developed an organic ink for printable electronics that doesn't need to be doped for good conductivity. "We normally dope our organic polymers to improve their conductivity and the device performance. The proces... » read more

Power/Performance Bits: Jan. 7
By Jesse Allen - 07 Jan, 2020 - Comments: 0

Ferroelectric FET Researchers at Purdue University developed a ferroelectric transistor capable of both processing and storing information. The ferroelectric semiconductor field-effect transistor is made of alpha indium selenide, which overcomes the problem of ferroelectric materials not interfacing well with silicon. “We used a semiconductor that has ferroelectric properties. This way tw... » read more

Power/Performance Bits: Dec. 23
By Jesse Allen - 23 Dec, 2019 - Comments: 0

High mobility transistor Engineers at the University of Delaware created a high-electron mobility transistor, a device that amplifies and controls electrical current, using gallium nitride (GaN) with indium aluminum-nitride as the barrier on a silicon substrate. Among devices of its type, the team says their transistor has record-setting properties, including record low gate leakage current... » read more

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