tag: GaN

Board-Level Packaging Method For Device Encapsulation To Enable Water Immersion Cooling
By Technical Paper Link - 14 Apr, 2025 - Comments: 0

A new technical paper titled "Thermally Conductive Electrically Insulating Electronics Packaging for Water Immersion Cooling" was published by researchers at University of Illinois, Urbana, University of Arkansas and UC Berkeley. Abstract "Power densification is making thermal design a key step in the development of future electrical devices. Systems such as data centers and electric vehicl... » read more

Considerations And Guidelines For Using High-Voltage CoolGaN Switches In Power Systems
By Infineon - 03 Apr, 2025 - Comments: 0

The design of an electronic switched-mode power system has always been a complex task, requiring both knowledge and experience. With the appearance of gallium nitride (GaN), this task has even become more complex, because the electrical properties of GaN expand the room for possible system solutions. Particularly the lack of a physical body diode and the lateral device operation enable complete... » read more

Strategies For Reducing The Effective GaN/Diamond TBR
By Technical Paper Link - 30 Mar, 2025 - Comments: 0

A new technical paper titled "Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications" was published by researchers at University of Bristol, Cardiff University and Akash Systems. Abstract "GaN high electron mobility transistors (HEMTs) on SiC substrates are the highest performing commercially available transistors for high-power, hi... » read more

GaN Power Semiconductors – 2025 Predictions
By Infineon - 06 Feb, 2025 - Comments: 0

GaN power semiconductors are on a tremendous growth trajectory. GaN is on its way to reaching more tipping points in its adoption in more industries. Consumer chargers and adapters have been the forerunner, more applications are expected to tip this year, with many others to follow in time. Still, there are some headwinds for GaN to reach this adoption level. Why is that and how can we overcome... » read more

Electrifying Everything: Power Moves Toward ICs
By Gregory Haley - 23 Jan, 2025 - Comments: 0

As electronic systems grow increasingly complex and energy-intensive, traditional power management methods — centered on centralized systems and external components — are proving inadequate. The next wave of innovation is to bring power control closer to the action — directly on the chip or into a heterogeneous package. This change is driven by a relentless pursuit of efficiency, scala... » read more

Improving GaN Device Architectures
By Katherine Derbyshire - 23 Jan, 2025 - Comments: 0

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits use different materials for different parts of the overall operating range. GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and... » read more

Challenges In Powering Electrification With GaN And SiC
By Katherine Derbyshire - 17 Dec, 2024 - Comments: 0

The wish list of device properties that designers of power management systems would like to have is lengthy, but no single material is yet sufficient for the full range of power control applications. For control transistors to handle power surges, breakdown voltages should be at least triple the expected operating voltage — 1.2 kilovolts or more for many electric vehicle applications, and ... » read more

Silicon Carbide And Gallium Nitride Bring New Challenges For Semiconductor Test
By Jeorge Hurtarte - 12 Nov, 2024 - Comments: 0

In the era of megatrends such as electric vehicles (EVs), new technologies are emerging to keep up with evolving demands. One example of this is the evolution of compound semiconductors that use silicon carbide (SiC) and gallium nitride (GaN) for high-performance power systems. Innovating test protocols to handle wide bandgap materials For many power-related applications, the semiconductor in... » read more

Research Bits: Oct. 29
By Jesse Allen - 29 Oct, 2024 - Comments: 0

Micro-LED DUV maskless lithography Researchers from the University of Science and Technology of China, Anhui GaN Semiconductor, and Wuhan University developed a vertically integrated micro-LED array for deep ultraviolet (DUV) maskless photolithography. The team fabricated a DUV display integrated chip with 564 pixels-per-inch density that uses a three-dimensional vertically integrated devic... » read more

Dualtronics: Photonic Devices on the Cation Face and Electronic Devices on the Anion Face of the Same Wafer
By Technical Paper Link - 26 Sep, 2024 - Comments: 0

A new technical paper titled "Using both faces of polar semiconductor wafers for functional devices" was published by researchers at Cornell University and Polish Academy of Sciences. Find the technical paper here. Published September 2024. Cornell University's news release is here, stating "Cornell researchers, in collaboration with a team at the Polish Academy of Sciences, have develope... » read more

← Older posts

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2025 SMG   |  Terms of Service  |  Privacy Policy