tag: GaN

Research Bits: July 1
By Jesse Allen - 01 Jul, 2025 - Comments: 0

Copper-to-copper bonding for GaN integration Researchers from MIT, Georgia Tech, and Air Force Research Laboratory propose a bonding process to integrate gallium nitride (GaN) transistors onto standard silicon CMOS chips. They used the process to create a power amplifier. “We wanted to combine the functionality of GaN with the power of digital chips made of silicon, but without having to ... » read more

Research Bits: June 17
By Jesse Allen - 17 Jun, 2025 - Comments: 0

Superlattice castellated FETs Researchers from the University of Bristol and Northrop Grumman Mission Systems discovered a latch-effect in gallium nitride (GaN) that could lead to improved radio frequency device performance, crucial for enabling 6G devices. “We have piloted a device technology, working with collaborators, called superlattice castellated field effect transistors (SLCFETs),... » read more

E-Powertrain EMC Design And Validation
By Ansys - 14 May, 2025 - Comments: 0

In the pursuit of zero-emission vehicles, the design of the e-powertrain and its electronic systems encounters numerous challenges. From stringent regulatory requirements to the demand for enhanced performance and efficiency, the landscape is ripe with complexities. Here, simulation emerges as a vital tool, offering a pathway to navigate these challenges with precision and innovation. What y... » read more

Enhancing AI Datacenter PSUs With Hybrid-Si, SiC, And GaN Power Devices
By Infineon - 30 Apr, 2025 - Comments: 0

The rapid growth of artificial intelligence (AI) is driving an unprecedented demand for processing power in data centers, resulting in a surge in power demand at the rack level. With the existing data center rack sizes, the challenge is to deliver more power and efficiency in the same physical footprint apart from costs and cooling. To address this, Infineon has developed a range of hybrid powe... » read more

Board-Level Packaging Method For Device Encapsulation To Enable Water Immersion Cooling
By Technical Paper Link - 14 Apr, 2025 - Comments: 0

A new technical paper titled "Thermally Conductive Electrically Insulating Electronics Packaging for Water Immersion Cooling" was published by researchers at University of Illinois, Urbana, University of Arkansas and UC Berkeley. Abstract "Power densification is making thermal design a key step in the development of future electrical devices. Systems such as data centers and electric vehicl... » read more

Considerations And Guidelines For Using High-Voltage CoolGaN Switches In Power Systems
By Infineon - 03 Apr, 2025 - Comments: 0

The design of an electronic switched-mode power system has always been a complex task, requiring both knowledge and experience. With the appearance of gallium nitride (GaN), this task has even become more complex, because the electrical properties of GaN expand the room for possible system solutions. Particularly the lack of a physical body diode and the lateral device operation enable complete... » read more

Strategies For Reducing The Effective GaN/Diamond TBR
By Technical Paper Link - 30 Mar, 2025 - Comments: 0

A new technical paper titled "Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications" was published by researchers at University of Bristol, Cardiff University and Akash Systems. Abstract "GaN high electron mobility transistors (HEMTs) on SiC substrates are the highest performing commercially available transistors for high-power, hi... » read more

GaN Power Semiconductors – 2025 Predictions
By Infineon - 06 Feb, 2025 - Comments: 0

GaN power semiconductors are on a tremendous growth trajectory. GaN is on its way to reaching more tipping points in its adoption in more industries. Consumer chargers and adapters have been the forerunner, more applications are expected to tip this year, with many others to follow in time. Still, there are some headwinds for GaN to reach this adoption level. Why is that and how can we overcome... » read more

Electrifying Everything: Power Moves Toward ICs
By Gregory Haley - 23 Jan, 2025 - Comments: 0

As electronic systems grow increasingly complex and energy-intensive, traditional power management methods — centered on centralized systems and external components — are proving inadequate. The next wave of innovation is to bring power control closer to the action — directly on the chip or into a heterogeneous package. This change is driven by a relentless pursuit of efficiency, scala... » read more

Improving GaN Device Architectures
By Katherine Derbyshire - 23 Jan, 2025 - Comments: 0

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits use different materials for different parts of the overall operating range. GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and... » read more

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