tag: GaN

Silicon Carbide And Gallium Nitride Bring New Challenges For Semiconductor Test
By Jeorge Hurtarte - 12 Nov, 2024 - Comments: 0

In the era of megatrends such as electric vehicles (EVs), new technologies are emerging to keep up with evolving demands. One example of this is the evolution of compound semiconductors that use silicon carbide (SiC) and gallium nitride (GaN) for high-performance power systems. Innovating test protocols to handle wide bandgap materials For many power-related applications, the semiconductor in... » read more

Research Bits: Oct. 29
By Jesse Allen - 29 Oct, 2024 - Comments: 0

Micro-LED DUV maskless lithography Researchers from the University of Science and Technology of China, Anhui GaN Semiconductor, and Wuhan University developed a vertically integrated micro-LED array for deep ultraviolet (DUV) maskless photolithography. The team fabricated a DUV display integrated chip with 564 pixels-per-inch density that uses a three-dimensional vertically integrated devic... » read more

Dualtronics: Photonic Devices on the Cation Face and Electronic Devices on the Anion Face of the Same Wafer
By Technical Paper Link - 26 Sep, 2024 - Comments: 0

A new technical paper titled "Using both faces of polar semiconductor wafers for functional devices" was published by researchers at Cornell University and Polish Academy of Sciences. Find the technical paper here. Published September 2024. Cornell University's news release is here, stating "Cornell researchers, in collaboration with a team at the Polish Academy of Sciences, have develope... » read more

New Materials Are in High Demand
By Bryon Moyer - 19 Sep, 2024 - Comments: 0

Materials suppliers are responding to the intense pressures to improve power, performance, scaling, and cost issues, which follows a long timeline from synthesis to development and high volume manufacturing in fabs. The advances in machine learning help present a wide field of candidates, which engineers then narrow to potential use. When building standard logic semiconductor chips, the prim... » read more

Research Bits: Aug. 27
By Jesse Allen - 27 Aug, 2024 - Comments: 0

Ammonia-free GaN Researchers from Nagoya University discovered a way to grow gallium nitride (GaN) semiconductors without using ammonia. The process is both more environmentally friendly and allows for high-quality growth of crystals at a lower cost. Metal organic chemical vapor deposition (MOCVD) is the most common technique for GaN production, which uses ammonia (NH3) gas as the source of... » read more

Driving Cost Lower and Power Higher With GaN
By Anne Meixner - 06 Aug, 2024 - Comments: 0

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven by lower costs and processes that are more compatible with bulk silicon. Efficiency, power density (size), and cost are the three major concerns in power electronics, and GaN can meet all three c... » read more

Research Bits: June 18
By Jesse Allen - 18 Jun, 2024 - Comments: 0

Gallium nitride can take the heat Researchers from Massachusetts Institute of Technology (MIT), the UAE's Technology Innovation Institute, Ohio State University, Rice University, and Bangladesh University of Engineering and Technology investigated the performance of ohmic contacts in a gallium nitride (GaN) device at extremely high temperatures, such as those that would be required for devices... » read more

Liquid Cooling And GaN: A Winning Combination
By Paul Wiener - 06 Jun, 2024 - Comments: 0

Data centers are facing an unprecedented transformation due to the surge in generative AI and other emerging technologies. A single ChatGPT session consumes 50 to 100 times more energy than a comparable Google search, escalating data center rack power requirements towards 200 kW or more, presenting serious challenges for operators. Cooling, in fact, takes up about 40% of the power requireme... » read more

GaN Devices: Properties and Performance At Extremely High Temperatures
By Technical Paper Link - 28 May, 2024 - Comments: 0

A new technical paper titled "High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C" was published by researchers at MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of Engineering and Technology. Abstract "This Letter reports the stability of regrown and alloyed Ohmic contacts to A... » read more

A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LED
By Technical Paper Link - 02 May, 2024 - Comments: 0

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National Laboratory. Abstract: "GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-perfor... » read more

← Older posts

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy