tag: gate-all-around FET

Device Characteristics of GAA-Structured CMOS and CTFET Under Varying Temperatures
By Technical Paper Link - 10 Jun, 2024 - Comments: 0

A new technical paper titled "Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application" was published by researchers at National Tsing Hua University and National United University in Taiwan. Abstract "Tunneling field effect transistors (TFET) have emerged as promising candidates for integrated circuits beyond conventional metal oxide semiconductor ... » read more

Understanding CFETs, A Next Generation Transistor Architecture
By Sam Sarkar - 23 May, 2024 - Comments: 0

Computing power has experienced exponential growth over the last 70 years. This has largely been achieved through transistor scaling. Due to a continuous reduction in the size of transistors, engineers have been able to pack more and more of them onto a single chip [1]. This has led to faster, more powerful, and more energy-efficient devices. Improvements in fabrication processes and materials,... » read more

Improving Gate All Around Transistor Performance Using Virtual Process Window Exploration
By Sumant Sarkar - 25 Jul, 2023 - Comments: 0

As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar transistor architectures toward 3D devices. Gate-all-around (GAA) architectures are an example of this type of 3D device [2]. In a GAA transistor, the gate oxide surrounds the channel in all directions.... » read more

The History Of CMOS
By Paul McLellan - 25 May, 2023 - Comments: 0

Since CMOS has been around for about 50 years, a comprehensive history would be a book. This blog focuses on what I consider the major transitions. NMOS Before CMOS, there was NMOS (also PMOS, but I have no direct experience with that). An NMOS gate consisted of a network of N-transistors between the output and Vss, and a resistor (actually a transistor with an implant) between the output and... » read more

Modeling Effects Of Fluctuation Sources On Electrical Characteristics Of GAA Si NS MOSFETs Using ANN-Based ML
By Technical Paper Link - 07 Sep, 2022 - Comments: 0

Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs." "This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF... » read more

Chipmaking In The Third Dimension
By Krishnan Shrinivasan - 16 Jun, 2022 - Comments: 0

Every few months, new and improved electronics are introduced. They’re typically smaller, smarter, faster, have more bandwidth, are more power-efficient, etc. — all thanks to a new generation of advanced chips and processors. Our digital society has come to expect this steady drip of new devices as sure as the sun will rise tomorrow. Behind the scenes, however, engineers are working feve... » read more

Precision Selective Etch And The Path To 3D
By Vahid Vahedi - 17 Mar, 2022 - Comments: 0

Scaling (the shrinking of the tiny devices in chips such as transistors and memory cells) has never been easy, but making the next generation of advanced logic and memory devices a reality requires creating new structures at the atomic scale. When working with dimensions this small, there is little room for variation. Compounding the problem is a need to remove material isotropically, or, un... » read more

Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs
By Technical Paper Link - 28 Aug, 2021 - Comments: 0

  Abstract "Mechanical stress is demonstrated in the fabrication process of nanosheet FETs. In particular, unwanted mechanical instability stemming from gravity during channel-release is covered in detail by aid of 3-D simulations. The simulation results show the physical weakness of suspended nanosheets and the impact of nanosheet thickness. Inner spacer engineering based on geometr... » read more

Advancing To The 3nm Node And Beyond: Technology, Challenges And Solutions
By Michael Hargrove - 19 Aug, 2021 - Comments: 0

It seems like yesterday that finFETs were the answer to device scaling limitations imposed by shrinking gate lengths and required electrostatics. The introduction of finFETs began at the 22nm node and has continued through the 7nm node. Beyond 7nm, it looks like nanosheet device structures will be used for at least the 5nm and probably the 3nm nodes. The nanosheet device structure is the brainc... » read more

The Increasingly Uneven Race To 3nm/2nm
By Mark LaPedus and Ed Sperling - 24 May, 2021 - Comments: 2

Several chipmakers and fabless design houses are racing against each other to develop processes and chips at the next logic nodes in 3nm and 2nm, but putting these technologies into mass production is proving both expensive and difficult. It's also beginning to raise questions about just how quickly those new nodes will be needed and why. Migrating to the next nodes does boost performance an... » read more

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