tag: high k dielectrics

Intel Inside The Package
By Ed Sperling - 08 May, 2017 - Comments: 1

Mark Bohr, senior fellow and director of process architecture and integration at Intel, sat down with Semiconductor Engineering to discuss the growing importance of multi-chip integration in a package, the growing emphasis on heterogeneity, and what to expect at 7nm and 5nm. What follows are excerpts of that interview. SE: There’s a move toward more heterogeneity in designs. Intel clearly ... » read more

FinFET Scaling Reaches Thermal Limit
By Brian Bailey - 12 May, 2016 - Comments: 2

In 1974, Robert H. Dennard was working as an IBM researcher. He introduced the idea that MOSFETs would continue to work as voltage-controlled switches in conjunction with shrinking features, providing doping levels, the chip's geometry, and voltages are scaled along with those size reductions. This became known as Dennard's Law even though, just like Moore's Law, it was anything but a law. T... » read more

Still Searching For Rare Earths
By Mark LaPedus - 20 Aug, 2015 - Comments: 1

There is both good and bad news for buyers of rare earths. The good news: It’s a buyers’ market. Prices for rare earths remain depressed amid a glut in the marketplace. The bad news: The supplier base is shaky. China still accounts for 85% of the world’s total production of rare earths, but most Chinese suppliers are operating at a loss. And two of the main non-Chinese suppliers, M... » read more

One-On-One: Mark Bohr
By Mark LaPedus - 18 Sep, 2014 - Comments: 1

Semiconductor Engineering sat down to discuss process technology, transistor trends, chip-packaging and other topics with Mark Bohr, a senior fellow and director of process architecture and integration at Intel. SE: Intel recently introduced chips based on its new 14nm process. Can you briefly describe the 14nm process? Bohr: It’s our second-generation, tri-gate technology. So it has al... » read more

What’s After Silicon?
By Katherine Derbyshire - 09 Jan, 2014 - Comments: 4

As discussed in the first article in this series, germanium is one of the leading candidates to succeed silicon as the channel material for advanced transistors, and has been for several years. The fundamental challenges of germanium integration were detailed at length in 2007. Unfortunately, knowing what the issues are does not necessarily lead to a solution. When a MOSFET transistor turns ... » read more

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