GaN finFETs, scaling GaN
At the upcoming IEEE International Electron Devices Meeting (IEDM) in San Francisco, a slew of entities will present papers on the latest technologies in R&D. The event, to be held Dec. 11–15, involve papers on advanced packaging, CMOS image sensors, interconnects, transistors, power devices and other technologies.
At IEDM, Intel will present a paper on a GaN-...
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