Power/Performance Bits: Dec. 23


GaN building blocks A team of engineers from Cornell University, the University of Notre Dame, and the semiconductor company IQE created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches. In spite of having many desirable features as a material, GaN is notorious for its defects and reliability issues. So the team zeroed in on device... » read more

Still Waiting For III-V Chips


For years, chipmakers have been searching for an alternative material to replace traditional silicon in the channel for advanced CMOS devices at 7nm and beyond. There’s a good reason, too: At 7nm, silicon will likely run out of steam in the channel. Until recently, chipmakers were counting on III-V materials for the channels, at least for NFET. Compared to silicon, III-V materials provide ... » read more

Power/Performance Bits: Dec. 17


Low-power tunneling transistor to enable high-performance devices To make fast and low-power computing devices possible for energy-constrained applications such as smart sensor networks, implantable medical electronics and ultra-mobile computing, a new type of transistor is needed. To this end, researchers at Penn State, the National Institute of Standards and Technology and specialty wafer fo... » read more

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