tag: leakage current

CFETs with Optimized Buried Power Rails
By Technical Paper Link - 19 Feb, 2025 - Comments: 0

A technical paper titled "Buried power rail to suppress substrate leakage in complementary field effect transistor (CFET)" was published by researchers at Korea University and Sungkyunkwan University. Abstract "In the pursuit of minimizing the track height in standard cell, a design innovation incorporating complementary field-effect transistors (CFETs) and Buried Power Rail (BPR) technolog... » read more

Controlling Leakage Power
By Matthew Hogan - 17 Feb, 2025 - Comments: 0

IC designers face a significant challenge in managing leakage power - a phenomenon that can profoundly impact your device's power, performance, area (PPA), and overall reliability. Leakage can occur in various ways, from parasitic leakage to analog gate leakage or digital gate leakage, and you must address these issues with great care, as even subtle circuit changes can lead to reliability prob... » read more

Benefits Of The Ultra-Low Leakage Currents from IGZO TFTs For Neuromorphic Applications
By Technical Paper Link - 27 Aug, 2024 - Comments: 0

A new technical paper titled "A tunable multi-timescale Indium-Gallium-Zinc-Oxide thin-film transistor neuron towards hybrid solutions for spiking neuromorphic applications" was published by researchers at imec, CSIC Universidad de Sevilla, and Sungkyunkwan University. Abstract "Spiking neural network algorithms require fine-tuned neuromorphic hardware to increase their effectiveness. Such ... » read more

Lateral 3 kV AlN SBDs on Bulk AlN Substrates By MOCVD
By Technical Paper Link - 27 Nov, 2023 - Comments: 0

A new technical paper titled "3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD" was published by researchers at Arizona State University. Abstract "This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying char... » read more

What Designers Need To Know About GAA
By Brian Bailey - 13 Apr, 2023 - Comments: 3

While only 12 years old, finFETs are reaching the end of the line. They are being supplanted by gate-all-around (GAA), starting at 3nm [1], which is expected to have a significant impact on how chips are designed. GAAs come in two main flavors today — nanosheets and nanowires. There is much confusion about nanosheets, and the difference between nanosheets and nanowires. The industry still ... » read more

Design of a Mixed-signal ASIC for the front-end electronics of ionisation chambers
By Technical Paper Link - 23 May, 2022 - Comments: 0

New technical paper titled "An Ultra Low Current Measurement Mixed-Signal ASIC for Radiation Monitoring Using Ionisation Chambers," by researchers at CERN. Abstract "Measurement of total ionizing dose in a radiation field is efficiently carried out by ionisation chambers. The paper details the design of a mixed-signal ASIC for the front-end electronics of ionisation chambers. A single c... » read more

Always-On, Ultra-Low-Power Design Gains Traction
By Ann Mutschler - 14 Apr, 2022 - Comments: 0

A surge of electronic devices powered by batteries, combined with ever-increasing demand for more features, intelligence, and performance, is putting a premium on chip designs that require much lower power. This is especially true for always-on circuits, which are being added into AR/VR, automotive applications with over-the-air updates, security cameras, drones, and robotics. Also known as ... » read more

The Role of InGaN Quantum Barriers in Improving the Performance of GaN-based Laser Diodes
By Technical Paper Link - 21 Dec, 2021 - Comments: 0

Abstract: "In this work, different aspects which have influences on device performance of blue laser diodes (LDs) when using InGaN instead of GaN as quantum barrier (QB) layers are investigated theoretically and experimentally. In the modeling calculation, it is found that the threshold current of LDs with InGaN QB layers is reduced obviously, but the slope efficiency is not largely improved... » read more

Transition-Metal Nitride Halide Dielectrics for Transition-Metal Dichalcogenide Transistors
By Technical Paper Link - 20 Dec, 2021 - Comments: 0

Abstract "Using first-principles calculations, we investigate six transition-metal nitride halides (TMNHs): HfNBr, HfNCl, TiNBr, TiNCl, ZrNBr, and ZrNCl as potential van der Waals (vdW) dielectrics for transition metal dichalcogenide (TMD) channel transistors. We calculate the exfoliation energies and bulk phonon energies and find that the six TMNHs are exfoliable and thermodynamically stabl... » read more

Sensors Will Proliferate In SoCs
By Tim Penhale-Jones - 15 Oct, 2020 - Comments: 0

No one likes being put on the spot, and yet we all like a forecast…and as we all know, the only guarantee with a forecast is that it is wrong. Sports commentators have carved out a special niche for themselves with the ‘commentators curse:’ just as they extol the virtues of an individual or a team, the sporting gods prove them wrong in spectacular fashion! Governments are no better: econo... » read more

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