Understanding Why Drain-Current in GAAFETs Deviates from Thermionic Dependence at Negative Gate Voltages (Sandia National Lab, LIST)


A new technical paper, "Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors," was published by researchers at Sandia National Laboratories and Luxembourg Institute of Science and Technology. Abstract "Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect tra... » read more

Technical Paper Round-up: August 8


New technical papers added to Semiconductor Engineering’s library this week. [table id=44 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

Fabrication And Characterization Of Junctionless FETs


New technical paper titled "Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions"  was published from researchers at Max Planck Center for Complex Fluid Dynamics, University of Twente, University of Glasgow, and Luxembourg Institute of Science and Technology (LIST). Abstract "Label-free field-effect transistor-based immunosensors are promising candidates for ... » read more