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Comprehensive Model of Electron Conduction in Oxide-Based Memristive Devices


Abstract "Memristive devices are two-terminal devices that can change their resistance state upon application of appropriate voltage stimuli. The resistance can be tuned over a wide resistance range enabling applications such as multibit data storage or analog computing-in-memory concepts. One of the most promising classes of memristive devices is based on the valence change mechanism in oxide... » read more

Time To Rethink Memory Chip Design And Verification


It’s no secret to anyone that semiconductor development grows more challenging all the time. Each new process technology node packs more transistors into each die, creating more electrical issues and making heat dissipation harder. Floorplanning, logic synthesis, place and route, timing analysis, electrical analysis, and functional verification stretch electronic design automation (EDA) tools... » read more

System Bits: Oct. 6


Tiny graphene pores for sensors In fundamental work that will likely guide current and future graphene membrane design principles in years to come, MIT researchers have created tiny pores in single sheets of graphene that have an array of preferences and characteristics similar to those of ion channels in living cells, and which could be useful as sensors. The researchers pointed out that e... » read more

Higher Frequencies Mean More Memory


As SoCs get more complex, whether due to higher frequencies or adding more functionality, there is a spillover effect on bandwidth, [getkc id="22" kc_name="memory"] and power. There is no simple way to just turn up the clock frequency in a complex [getkc id="81" kc_name="SoC"]. That relatively straightforward objective will likely require more power domains, more cores, more ways to move sig... » read more

The Rise Of Layout-Dependent Effects


By Ann Steffora Mutschler Designing for today’s advanced semiconductor manufacturing process nodes brings area, speed, power and other benefits but also new performance challenges as a result of the pure physics of running current through tiny wires. Layout-dependent effects (LDE), which emerged at 40nm and are having a larger impact at 28 and 20nm, introduce variability to circuit ... » read more