tag: metrology

Addressing Copper Clad Laminate Processing Distortion Using Overlay Corrections
By Keith Best - 11 Jul, 2023 - Comments: 0

All great voyages must come to an end. Such is the case with our series on the challenges facing the manufacturing of advanced IC substrates (AICS), the glue holding the heterogeneous integration ship together. In our first blog, we examined how cumulative overlay drift from individual redistribution layers could significantly increase overall trace length, resulting in higher interconnect res... » read more

Governments Begin To Shape Metrology Directions
By Gregory Haley - 11 Jul, 2023 - Comments: 0

Disruptions to the global semiconductor supply chain caused by the COVID-19 pandemic had a severe impact in nearly every sector of the worldwide economy, and especially the worldwide semiconductor market. Due to a shortage of chips, the global auto industry alone suffered a $210 billion loss in 2021, accompanied by a 7.7 million unit production drop, according to AlixPartners, a global consulti... » read more

From Lab To Fab: Increasing Pressure To Fuse IC Processes
By Gregory Haley - 06 Jun, 2023 - Comments: 0

Test, metrology, and inspection are essential for both the lab and the fab, but fusing them together so that data created in one is easily transferred to the other is a massive challenge. The chip industry has been striving to bridge these separate worlds for years, but the economics, speed, and complexity of change require a new approach. The never-ending push toward smaller, better-defined... » read more

Full Wafer OCD Metrology
By Nova - 06 Jun, 2023 - Comments: 0

Authored by: Daniel Doutt*a, Ping-ju Chena, Bhargava Ravooria, Tuyen K. Trana, Eitan Rothsteinb, Nir Kampelb, Lilach Tamamb, Effi Aboodyb, Avron Gerb, Harindra Vedalac ABSTRACT Optical Critical Dimension (OCD) spectroscopy is a reliable, non-destructive, and high-throughput measurement technique for metrology and process control that is widely used in semiconductor fabrication facilities (f... » read more

3D Memory Structures: Common Hole And Tilt Metrology Techniques and Capabilities
By Technical Paper Link - 03 Jun, 2023 - Comments: 0

A technical paper titled "Inline metrology of high aspect ratio hole tilt and center line shift using small-angle x-ray scattering" was published by researchers at Bruker Nano and Lam Research. Abstract: "High aspect ratio (HAR) structures found in three-dimensional nand memory structures have unique process control challenges. The etch used to fabricate channel holes several microns deep... » read more

Reflections On Photomask Japan 2023: Embracing The Era Of Curvilinear Masks
By Seiji Nagahara - 18 May, 2023 - Comments: 0

In April, 2023, I had the privilege of participating in Photomask Japan 2023 (PMJ2023), a web conference that brought together experts and enthusiasts in the field. The conference commenced with an enlightening keynote talk by Dr. Kurt Ronse of imec on the status and challenges of the high NA EUV ecosystem, presenting roadmaps for the introduction of high NA EUV. I would like to express my grat... » read more

How Metrology Tools Stack Up In 3D NAND Devices
By Laura Peters - 15 May, 2023 - Comments: 0

Multiple innovations in semiconductor processing are needed to enable 3D NAND bit density increases of about 30% per year at ever-decreasing cost per bit, all of which will be required to meet the nonvolatile storage needs of the big data era. 3D NAND is the first truly three-dimensional device in production. It is both a technology driver for new metrology methods and a significant part of ... » read more

Detection Of Contaminants In Positive And Negative Ion Mode Using In-line SIMS With An Oxygen Primary Ion Beam
By Nova - 09 May, 2023 - Comments: 0

Utilizing Secondary Ion Mass Spectrometry (SIMS) for in-line metrology is a newly emerging method of process control that requires contamination-free measurements, enabling SIMS on product wafers. SIMS measurements of negative ions are usually associated with a Cesium primary ion beam. Unfortunately, when Cesium is present in Silicon, it forms trap states in the Si band gap, which can cause ser... » read more

CDSAXS Milestones And Future Growth of X-ray-Based Metrology for 3D Nanostructures Important To Chip Industry
By Technical Paper Link - 20 Apr, 2023 - Comments: 0

A new technical paper titled "Review of the key milestones in the development of critical dimension small angle x-ray scattering at National Institute of Standards and Technology." Abstract: "An x-ray scattering based metrology was conceived over 20 years ago as part of a collaboration between National Institute of Standards and Technology (NIST) and International Business Machines Corporat... » read more

Challenges Grow For CD-SEMs At 5nm And Beyond
By Gregory Haley - 11 Apr, 2023 - Comments: 1

CD-SEM, the workhorse metrology tool used by fabs for process control, is facing big challenges at 5nm and below. Traditionally, CD-SEM imaging has relied on a limited number of image frames for averaging, which is necessary both to maintain throughput speeds and to minimize sample damage from the electron beam itself. As dimensions get smaller, these limitations result in higher levels of n... » read more

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