Comparing Thermal Properties In Molybdenum Substrate To Si And Glass For A System-On-Foil Integration (RIT, Lux)


A technical paper titled “Comparative Analysis of Thermal Properties in Molybdenum Substrate to Silicon and Glass for a System-on-Foil Integration” was published by researchers at Rochester Institute of Technology and Lux Semiconductors. Abstract: "Advanced electronics technology is moving towards smaller footprints and higher computational power. In order to achieve this, advanced packag... » read more

Backside Power Delivery Gears Up For 2nm Devices


The top three foundries plan to implement backside power delivery as soon as the 2nm node, setting the stage for faster and more efficient switching in chips, reduced routing congestion, and lower noise across multiple metal layers. The benefits of using this approach are significant. By delivering power using slightly fatter, less resistive lines on the backside, rather than inefficient fro... » read more

Etch Processes Push Toward Higher Selectivity, Cost Control


Plasma etching is perhaps the most essential process in semiconductor manufacturing, and possibly the most complex of all fab operations next to photolithography. Nearly half of all fab steps rely on a plasma, an energetic ionized gas, to do their work. Despite ever-shrinking transistor and memory cells, engineers continue to deliver reliable etch processes. “To sustainably create chips... » read more

Big Changes Ahead In Power Delivery, Materials, And Interconnects


Part one of this forecast looked at evolving transistor architectures and lithography platforms. This report examines revolutions in interconnects and packaging. When it comes to device interconnects, it’s hard to beat copper. Its low resistivity and high reliability have served the industry exceedingly well as both on-chip interconnect and wires between chips. But in logic chips, with int... » read more

How To Compare Chips


Traditional metrics for semiconductors are becoming much less meaningful in the most advanced designs. The number of transistors packed into a square centimeter only matters if they can be utilized, and performance per watt is irrelevant if sufficient power cannot be delivered to all of the transistors. The consensus across the chip industry is that the cost per transistor is rising at each ... » read more

Extending Copper Interconnects To 2nm


Transistor scaling is reaching a tipping point at 3nm, where nanosheet FETs will likely replace finFETs to meet performance, power, area, and cost (PPAC) goals. A significant architectural change is similarly being evaluated for copper interconnects at 2nm, a move that would reconfigure the way power is delivered to transistors. This approach relies on so-called buried power rails (BPRs) and... » read more

What’s Next For Transistors And Chiplets


Sri Samavedam, senior vice president of CMOS Technologies at Imec, sat down with Semiconductor Engineering to talk about finFET scaling, gate-all-around transistors, interconnects, packaging, chiplets and 3D SoCs. What follows are excerpts of that discussion. SE: The semiconductor technology roadmap is moving in several different directions. We have traditional logic scaling, but packaging i... » read more

EUV Pellicles Finally Ready


After a period of delays, EUV pellicles are emerging and becoming a requirement in high-volume production of critical chips. At the same time, the pellicle landscape for extreme ultraviolet (EUV) lithography is changing. ASML, the sole supplier of EUV pellicles, is transferring the assembly and distribution of these products to Mitsui. Others are also developing pellicles for EUV, a next-gen... » read more

Breaking The 2nm Barrier


Chipmakers continue to make advancements with transistor technologies at the latest process nodes, but the interconnects within these structures are struggling to keep pace. The chip industry is working on several technologies to solve the interconnect bottleneck, but many of those solutions are still in R&D and may not appear for some time — possibly not until 2nm, which is expected t... » read more

More EUV Mask Gaps


Extreme ultraviolet (EUV) lithography is at a critical juncture. After several delays and glitches, [gettech id="31045" comment="EUV"] is now targeted for 7nm and/or 5nm. But there are still a number of technologies that must come together before EUV is inserted into mass production. And if the pieces don’t fall into place, EUV could slip again. First, the EUV source must generate more ... » read more

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