tag: MTJ

The Impact of Magnetic Fields On STT-MRAM Operations
By Technical Paper Link - 29 Oct, 2024 - Comments: 0

A technical paper titled "Impact of external magnetic fields on STT-MRAM" was recently published by researchers at Univ. Grenoble Alpes, Everspin, GlobalFoundries, imec, et al. Abstract "This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of... » read more

Research Bits: Sept. 24
By Jesse Allen - 24 Sep, 2024 - Comments: 0

Modeling negative capacitance Researchers from Lawrence Berkeley National Laboratory developed an open-source 3D simulation framework capable of modeling the atomistic origins of negative capacitance in ferroelectric thin films at the device level. When a material has negative capacitance, it can store a greater amount of electrical charge at lower voltages. The team believes the FerroX fra... » read more

MTJ-Based CRAM Array
By Technical Paper Link - 01 Aug, 2024 - Comments: 0

A new technical paper titled "Experimental demonstration of magnetic tunnel junction-based computational random-access memory" was published by researchers at University of Minnesota and University of Arizona, Tucson. Abstract "The conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence because ... » read more

How Voltage-Controlled MRAM Devices Can Be Used To Create Unique Fingerprints Of Microelectronic Chips
By Technical Paper Link - 08 Jul, 2023 - Comments: 0

A technical paper titled "Reconfigurable Physically Unclonable Functions Based on Nanoscale Voltage-Controlled Magnetic Tunnel Junctions" was published by researchers at Northwestern University, Western Digital Corporation, Fe Research Inc., and University of Messina. Abstract: "With the fast growth of the number of electronic devices on the internet of things (IoT), hardware-based securi... » read more

DW-MTJ Devices For Noise-Resilient Networks For Neuromorphic Computing On The Edge
By Technical Paper Link - 08 Jul, 2023 - Comments: 0

A technical paper titled "Stochastic domain wall-magnetic tunnel junction artificial neurons for noise-resilient spiking neural networks" was published by researchers at University of Texas at Austin. Abstract: "The spatiotemporal nature of neuronal behavior in spiking neural networks (SNNs) makes SNNs promising for edge applications that require high energy efficiency. To realize SNNs in har... » read more

A Field-Free Switching Solution For SOT Magnetic Tunnel Junction Devices
By Technical Paper Link - 24 Jun, 2023 - Comments: 0

A technical paper titled “Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current” was published by researchers at KU Leuven, ETH Zurich, and IMEC. Abstract: "Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, i... » read more

Scatterometry-Based Methodologies For Characterization Of MRAM Technology
By Nova - 18 Jan, 2023 - Comments: 0

Magnetoresistive random-access memory (MRAM) technology and recent developments in fabrication processes have shown it to be compatible with Si-based complementary metal oxide semiconductor (CMOS) technologies. The perpendicular spin transfer torque MRAM (STT-MRAM) configuration opened up opportunities for an ultra-dense MRAM evolution and was most widely adapted for its scalability. Insertion ... » read more

High Performance Memory: Novel Lateral Double Magnetic Tunnel Junction (MTJ) With An Orthogonal Polarizer
By Technical Paper Link - 17 Nov, 2022 - Comments: 0

A new technical paper titled "Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory" was published by researchers at Hanyang University. Find the technical paper here. Published November 2022. Sin, S., Oh, S. Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory.... » read more

Radiation-Hardened Non-Volatile Magnetic Latch That Tolerates SNUs and DNUs
By Technical Paper Link - 13 Sep, 2022 - Comments: 0

A research paper titled "A Radiation-Hardened Non-Volatile Magnetic Latch with High Reliability and Persistent Storage" was published by researchers at Anhui University, Hefei University of Technology, LIRMM, and Kyutech. According to the abstract: "Based on an advanced triple-path dual-interlocked-storage-cell (TPDICE) and MTJs, this paper proposes a radiation-hardened non-volatile magneti... » read more

Imaging Of Overlay And Alignment Markers Under Opaque Layers Using Picosecond Laser Acoustic Measurements
By Onto Innovation - 09 Nov, 2021 - Comments: 0

Optically opaque materials present a series of challenges for alignment and overlay in the semi-damascene process flow or after the processing of the magnetic tunnel junction (MTJ) of a Magnetic Random-Access Memory (MRAM). The overlay and alignment of a lithographically defined pattern on top of the pattern and the underlying layer is fundamental to device operation in all multi-layer patterne... » read more

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