Blog Review: Sept. 25

By Jesse Allen - 25 Sep, 2024 - Comments: 0

Cadence’s Mamta Rana digs into how PCIe 6.1 ECN builds on the FLIT-based architecture introduced in PCIe 6.0, further optimizing flow control mechanisms to handle increased data rates and improved efficiency but making verification of shared credit updates essential. Siemens’ Nicolae Tusinschi provides a primer on formal verification, including what makes it different from simulation, pr... » read more

Research Bits: Aug. 27

By Jesse Allen - 27 Aug, 2024 - Comments: 0

Ammonia-free GaN Researchers from Nagoya University discovered a way to grow gallium nitride (GaN) semiconductors without using ammonia. The process is both more environmentally friendly and allows for high-quality growth of crystals at a lower cost. Metal organic chemical vapor deposition (MOCVD) is the most common technique for GaN production, which uses ammonia (NH3) gas as the source of... » read more

Research Bits: July 12

By Jesse Allen - 12 Jul, 2023 - Comments: 0

Predicting crystal orientation Researchers from Nagoya University and RIKEN trained an AI on optical photographs of polycrystalline silicon and used it to predict crystal orientation during manufacturing. They found that the AI successfully predicted the grain orientation distribution. “The time required for this measurement was about 1.5 hours for taking optical photographs, training the... » read more

Chip Industry’s Technical Paper Roundup: May 8

By Linda Christensen - 08 May, 2023 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=102 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us... » read more

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor

By Technical Paper Link - 05 May, 2023 - Comments: 0

A technical paper titled "Gate Drive Circuit Suitable for a GaN Gate Injection Transistor" was published by researchers at Nagoya University. Abstract "A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive circuit is thus required. Several studies in the lite... » read more

Research Bits: April 4

By Jesse Allen - 04 Apr, 2023 - Comments: 0

Wet-like plasma etching Researchers from Nagoya University and Hitachi developed a new etch method called wet-like plasma etching that combines the selectivity of wet etching with the controllability of dry etching. The researchers say the technique will make it possible to etch complex structures such as metal carbides consisting of titanium (Ti) and aluminum (Al), such as TiC or TiAlC, wh... » read more

Week In Review: Manufacturing, Test

By Gregory Haley - 24 Feb, 2023 - Comments: 0

The U.S. is aiming for the creation of two new advanced semiconductor manufacturing facilities with “a robust supplier ecosystem” supported by the $52.7 billion CHIPS Act. Included is an $11 billion investment in semiconductor research and development, along with the creation of a new public-private partnership called the National Semiconductor Technology Center. This follows more than a do... » read more

Technical Paper Round-up: May 17

By Linda Christensen - 17 May, 2022 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=27 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a go... » read more

Thinning of GaN-on-GaN HEMTs With A Laser Slicing Technique

By Technical Paper Link - 09 May, 2022 - Comments: 0

New technical paper "Laser slice thinning of GaN-on-GaN high electron mobility transistors" from researchers at Nagoya University, Hamamatsu Photonics, and National Institute for Materials Science, Tsukuba. Abstract "As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In... » read more

Power/Performance Bits: March 2

By Jesse Allen - 02 Mar, 2021 - Comments: 0

Fast-charging EV battery Electric vehicle adoption faces challenges from consumers' range anxiety and the extended lengths of time needed to charge a car's battery. Researchers at Pennsylvania State University are trying to address this by developing lithium iron phosphate EV batteries that have a range of 250 miles with the ability to charge in 10 minutes. It also is expected to have a lifeti... » read more

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Knowledge Centers
Entities, people and technologies explored

Shift Left Is The Tip Of The Iceberg

A transformative change is underway for semiconductor design and EDA. New languages, models, and abstractions will need to be created.

by Brian Bailey

Partitioning In The Chiplet Era

Understanding how chiplets interact under different workloads is critical to ensuring signal integrity and optimal performance in heterogeneous designs.

by Ann Mutschler

3.5D: The Great Compromise

Pros and cons of a middle-ground chiplet assembly that combines 2.5D and 3D-IC.

by Ed Sperling

AI’s Role In Chip Design Widens, Drawing In New Startups

Focus is on letting engineers do much more with the same or fewer resources — and less drudgery.

by Karen Heyman

Key Technologies To Extend EUV To 14 Angstroms

Alongside high-NA EUV will be better-performing photoresists, reduced roughness using passivation and etch, and lateral etching to reduce tip-to-tip dimensions.

by Laura Peters

Memory Fundamentals For Engineers

eBook: Nearly everything you need to know about memory, including detailed explanations of the different types of memory; how and where these are used today; what's changing, which memories are successful and which ones might be in the future; and the limitations of each memory type.

by The SE Staff

What Comes After HBM For Chiplets

The standard for high-bandwidth memory limits design freedom at many levels, but that is required for interoperability. What freedoms can be taken from other functions to make chiplets possible?