Accelerators Everywhere. Now What?


It's a good time to be a data scientist, but it's about to become much more challenging for software and hardware engineers. Understanding the different types and how data flows is the next path forward in system design. As the number of sources of data rises, creating exponential spikes in the volume of data, entirely new approaches to computing will be required. The problem is understandi... » read more

5nm Design Progress


Activity surrounding the 5nm manufacturing process node is quickly ramping, creating a better picture of the myriad and increasingly complex design issues that must be overcome. Progress at each new node after 28nm has required an increasingly tight partnership between the foundries, which are developing new processes and rule decks, along with EDA and IP vendors, which are adding tools, met... » read more

Where Is Selective Deposition?


For years, the industry has been working on an advanced technology called area-selective deposition for chip production at 5nm and beyond. Area-selective deposition, an advanced self-aligned patterning technique, is still in R&D amid a slew of challenges with the technology. But the more advanced forms of technology are beginning to make some progress, possibly inching closer from the la... » read more

Big Trouble At 3nm


As chipmakers begin to ramp up 10nm/7nm technologies in the market, vendors are also gearing up for the development of a next-generation transistor type at 3nm. Some have announced specific plans at 3nm, but the transition to this node is expected to be a long and bumpy one, filled with a slew of technical and cost challenges. For example, the design cost for a 3nm chip could exceed an eye-p... » read more

Extending The IC Roadmap


An Steegen, executive vice president of semiconductor technology and systems at Imec, sat down with Semiconductor Engineering to discuss IC scaling and chip packaging. Imec is working on next-generation transistors, but it is also developing several new technologies for IC packaging, such as a proprietary silicon bridge, a cooling technology and packaging modules. What follows are excerpts of t... » read more

More Lithography/Mask Challenges (Part 3)


Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

3D Extraction Necessities For 5nm And Below


For most of my career in product marketing I’ve been focused on Static Timing Analysis (STA). It was, and still is, an area with a diverse set of topics including graph based analysis and path based analysis, on-chip variation modeling, delay calculation, evolving library models, etc. During those years I always understood that  parasitic extraction was a crucial element of STA and more impo... » read more

Tech Talk: 7nm Litho


David Fried, chief technology officer at Coventor, digs into future scaling issues involving multi-patterning and new transistor types. https://youtu.be/FBnYRAL1xKY Related Stories Inside Next-Gen Transistors Coventor’s CTO looks at new types of transistors, the expanding number of challenges at future process nodes & the state of semiconductor development in China. Faster Time T... » read more

Power/Performance Bits: June 27


Superconducting nanowire memory cell Researchers at the University of Illinois at Urbana-Champaign and the State University of New York at Stony Brook developed a new nanoscale memory cell that provides stable memory at a smaller size than other proposed memory devices, and holds promise for successful integration with superconducting processors. The device comprises two superconducting nan... » read more

TFETs Cut Sub-Threshold Swing


One of the main obstacles to continued transistor scaling is power consumption. As gate length decreases, the sub-threshold swing (SS) — the gate voltage required to change the drain current by one order of magnitude — increases. As Qin Zhang, Wei Zhao, and Alan Seabaugh of Notre Dame explained in 2006, SS faces a theoretical minimum of 60 mV/decade at room temperature in conventional MO... » read more

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