tag: National Institute of Standards and Technology

Research Bits: June 8
By Jesse Allen - 08 Jun, 2026 - Comments: 0

Multi-tasking transistor Researchers at Pohang University of Science & Technology (POSTECH) developed a zinc oxide (ZnO) and tellurium (Te) heterojunction transistor technology that exhibits negative differential transconductance (NDT), where current decreases over a certain voltage range. By precisely controlling overlap length between the two materials, the team realized double negati... » read more

Research Bits: Mar. 31
By Jesse Allen - 31 Mar, 2026 - Comments: 0

2D hard mask material Researchers from Penn State University and University of Chemistry and Technology Prague propose using the 2D material chromium oxychloride (CrOCl) as a hard mask, because its layered structure is resistant to plasma etching and enables it to be an effective mask at smaller thicknesses. “This 2D material is like lasagna. It’s a layer-by-layer structure,” said Zih... » read more

Chip Industry Technical Paper Roundup: Dec 30
By Emma Riverso - 30 Dec, 2025 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=509 /] Find more semiconductor research papers here. » read more

CHIPS For America’s National Semiconductor Technology Center (NSTC) Program
By Barry Pangrle - 03 Jul, 2024 - Comments: 0

At this year’s Design Automation Conference, Jay Lewis, director of CHIPS for America National Semiconductor Technology Center (NSTC) Program, gave a presentation on the status and direction of the Center, its priorities for this year and how the NSTC can change the long-term trajectory for innovation. Fig. 1: Dr. Jay Lewis, director of NSTC Program, CHIPS R&D Office at the Dept. o... » read more

Metrology For 2D Materials: A Review From The International Roadmap For Devices And Systems (NIST, Et Al.)
By Technical Paper Link - 30 Apr, 2024 - Comments: 0

A technical paper titled “Metrology for 2D materials: a perspective review from the international roadmap for devices and systems” was published by researchers at Arizona State University, IBM Research, Unity-SC, and the National Institute of Standards and Technology (NIST). Abstract: "The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into h... » read more

Research Bits: Feb. 13
By Jesse Allen - 13 Feb, 2024 - Comments: 0

Fast phase-change memory Researchers from Stanford University, TSMC, National Institute of Standards and Technology (NIST), and University of Maryland developed a new phase-change memory for future AI and data-centric systems. It is based on GST467, an alloy of four parts germanium, six parts antimony, and seven parts tellurium, which is sandwiched between several other nanometer-thin material... » read more

A New Phase-Change Memory For Processing Large Amounts Of Data 
By Technical Paper Link - 30 Jan, 2024 - Comments: 0

A technical paper titled “Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory” was published by researchers at Stanford University, TSMC, NIST, University of Maryland, Theiss Research and Tianjin University. Abstract: "Data-centric applications are pushing the limits of energy-efficiency in today’s computing systems, including those based on... » read more

An Overview Of Federal Government Semiconductors And Microelectronics Standards Activities (NIST)
By Technical Paper Link - 12 Jan, 2024 - Comments: 0

A technical paper titled “Semiconductors and Microelectronics Standards, Report of the Semiconductors and Microelectronics Working Group” was published by researchers at the National Institute of Standards and Technology (NIST). Abstract: "This report of the Semiconductors and Microelectronics Working Group of the Interagency Committee on Standards Policy (ICSP) provides an overview of Fe... » read more

Summary Of The Progress In Beta-Phase Gallium Oxide Field-Effect Transistors
By Technical Paper Link - 11 Jan, 2024 - Comments: 0

A technical paper titled “Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications” was published by researchers at George Mason University and National Institute of Standards and Technology (NIST). Abstract: "Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is exp... » read more

2D Computing Magnets For Temperatures Up To 170-Degrees Fahrenheit
By Technical Paper Link - 12 Dec, 2023 - Comments: 0

A technical paper titled “Magnetic properties of intercalated quasi-2D Fe3-xGeTe2 van der Waals magnet” was published by researchers at University of Texas at El Paso, National Institute of Standards and Technology (NIST), University of Edinburgh, Donostia International Physics Centre (DIPC), Hampton University, and Brookhaven National Laboratory. Abstract: "Among several well-kno... » read more

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