Ultra-Low Power CiM Design For Practical Edge Scenarios

A technical paper titled “Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET” was published by researchers at Zhejiang University, University of Notre Dame, Technical University of Munich, Munich Institute of Robotics and Machine Intelligence, and the Laboratory of Collaborative Sensing and Autonomous Unmanned Systems of Zhejiang Province. Abstract: "Compute... » read more

SRAM Scaling Issues, And What Comes Next

The inability of SRAM to scale has challenged power and performance goals forcing the design ecosystem to come up with strategies that range from hardware innovations to re-thinking design layouts. At the same time, despite the age of its initial design and its current scaling limitations, SRAM has become the workhorse memory for AI. SRAM, and its slightly younger cousin DRAM, have always co... » read more

Alleviating the DRAM Capacity Bottleneck in Consumer Devices with NVMs

A new technical paper titled "Extending Memory Capacity in Modern Consumer Systems With Emerging Non-Volatile Memory: Experimental Analysis and Characterization Using the Intel Optane SSD" was published by researchers at ETH Zurich, University of Illinois Urbana-Champaign, Google, and Rivos. Abstract Excerpt "DRAM scalability is becoming a limiting factor to the available memory capacity in... » read more

Novel NVM Devices and Applications (UC Berkeley)

A dissertation titled “Novel Non-Volatile Memory Devices and Applications” was submitted by a researcher at University of California Berkeley. Abstract Excerpt "This dissertation focuses on novel non-volatile memory devices and their applications. First, logic MEM switches are demonstrated to be operable as NV memory devices using controlled welding and unwelding of the contacting electro... » read more

ReRAM Seeks To Replace NOR

Resistive RAM is gaining renewed attention as demand for faster and cheaper non-volatile memory alternatives continues to grow, particularly in applications such as automotive. Embedded flash has long left designers wishing for better write speeds and lower energy consumption, but as the leading edge of that technology shrunk to 28nm, another problem arose. Manufacturing flash memory at thos... » read more

Microarchitectural Side-Channel Attacks And Defenses on NVRAM DIMMs

A new technical paper titled "NVLeak: Off-Chip Side-Channel Attacks via Non-Volatile Memory Systems" was published by researchers at UC San Diego, Purdue University, and UT Austin. This paper was included at the recent 32nd USENIX Security Symposium. Abstract: "We study microarchitectural side-channel attacks and defenses on non-volatile RAM (NVRAM) DIMMs. In this study, we first perform r... » read more

Information flow policies for NVM Technologies

A new technical paper titled "Automated Information Flow Analysis for Integrated Computing-in-Memory Modules" was published by researchers at RWTH Aachen University. Abstract: "Novel non-volatile memory (NVM) technologies offer high-speed and high-density data storage. In addition, they overcome the von Neumann bottleneck by enabling computing-in-memory (CIM). Various computer architectures... » read more

Spiking Neural Networks: Hardware & Algorithm Developments

A new technical paper titled "Exploring Neuromorphic Computing Based on Spiking Neural Networks: Algorithms to Hardware" was published by researchers at Purdue University, Pennsylvania State University, and Yale University. Excerpt from Abstract: "In this article, we outline several strides that neuromorphic computing based on spiking neural networks (SNNs) has taken over the recent past, a... » read more

Ferroelectric Polarization in an Elementary Substance or Single-Element Compound

A technical paper titled "Two-dimensional ferroelectricity in a single-element bismuth monolayer" was published by researchers at National University of Singapore, Zhejiang University, Tianjin University, and University of Chinese Academy of Sciences. Abstract "Ferroelectric materials are fascinating for their non-volatile switchable electric polarizations induced by the spontaneous inversi... » read more

New Spintronics Manufacturing Process, Allowing Scaling Down To Sub-5nm (U. of Minnesota/NIST)

A new technical paper titled "Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics" was published by researchers at University of Minnesota and NIST, with funding by DARPA and others. According to a University of Minnesota summary news article, "The industry standard spintronic material, cobalt iron boron, has reached a limit in its scalability. The... » read more

← Older posts