Research Bits: Aug. 27


Ammonia-free GaN Researchers from Nagoya University discovered a way to grow gallium nitride (GaN) semiconductors without using ammonia. The process is both more environmentally friendly and allows for high-quality growth of crystals at a lower cost. Metal organic chemical vapor deposition (MOCVD) is the most common technique for GaN production, which uses ammonia (NH3) gas as the source of... » read more

Research Bits: June 18


Gallium nitride can take the heat Researchers from Massachusetts Institute of Technology (MIT), the UAE's Technology Innovation Institute, Ohio State University, Rice University, and Bangladesh University of Engineering and Technology investigated the performance of ohmic contacts in a gallium nitride (GaN) device at extremely high temperatures, such as those that would be required for devices... » read more

Chip Industry Technical Paper Roundup: June 10


New technical papers added to Semiconductor Engineering’s library this week. [table id=232 /] More ReadingTechnical Paper Library home » read more

GaN Devices: Properties and Performance At Extremely High Temperatures


A new technical paper titled "High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C" was published by researchers at MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of Engineering and Technology. Abstract "This Letter reports the stability of regrown and alloyed Ohmic contacts to A... » read more

Chip Industry Technical Paper Roundup: May 7


New technical papers added to Semiconductor Engineering’s library this week. [table id=223 /] More ReadingTechnical Paper Library home » read more

A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LED


A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National Laboratory. Abstract: "GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-perfor... » read more

Week In Review: Auto, Security, Pervasive Computing


The Biden-Harris Administration announced the U.S. Cyber Trust Mark, a cybersecurity certification and labeling program to help consumers choose smart devices less vulnerable to cyberattacks. The Federal Communications Commission (FCC) is applying to register the Cyber Trust Mark with the U.S. Patent and Trademark Office and it would appear on qualifying smart products, including refrigerators,... » read more

Chip Industry’s Technical Paper Roundup: July 18


New technical papers recently added to Semiconductor Engineering’s library: [table id=118 /] (more…) » read more

An Efficient Method To Develop, Evaluate, and Demonstrate Connected And Autonomous Driving 


A technical paper titled "Vehicle-in-Virtual-Environment (VVE) Method for Autonomous Driving System Development, Evaluation and Demonstration" was published by researchers at Ohio State University. Abstract: "The current approach to connected and autonomous driving function development and evaluation uses model-in-the-loop simulation, hardware-in-the-loop simulation and limited proving ground... » read more

Week In Review: Auto, Security, Pervasive Computing


Inflection AI raised $1.3 billion in a new funding round led by Microsoft, Reid Hoffman, Bill Gates, Eric Schmidt, and NVIDIA after raising $225 million in the first round to support the ongoing development of Pi, a “useful, friendly, and fun” AI. In partnership with CoreWeave and NVIDIA, Inflection aims to build the world’s largest AI cluster, comprised of 22,000 NVIDIA H100 Tensor Core ... » read more

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