Chip Industry’s Technical Paper Roundup: July 18

TaN nanowires for quantum; system-level power integrity verification; DRAM read disturbance; vehicle-in-virtual method for autonomous driving; redox-based ionic devices for HPC; capturing images in a biological camera; 2D materials for flexible electronics; transistors for conformable bioelectronics; mitigating fault attacks; antenna for nanoscale light sources.


New technical papers recently added to Semiconductor Engineering’s library:

Technical Paper Research Organizations
A Compressed Multivariate Macromodeling Framework for Fast Transient Verification of System-Level Power Delivery Networks Politecnico di Torino and Intel Corporation
RowPress: Amplifying Read Disturbance in Modern DRAM Chips ETH Zürich
Ultra-thin TaN Damascene Nanowire Structures on 300 mm Si Wafers for Quantum Applications NY CREATES, United States Air Force Research Laboratory and SUNY Polytechnic Institute
Vehicle-in-Virtual-Environment (VVE) Method for Autonomous Driving System Development, Evaluation and Demonstration Ohio State University
A Redox-Based Ion-Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses National Institute for Materials Science (NIMS) and Tokyo University of Science
A biological camera that captures and stores images directly into DNA National University of Singapore
Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications Advanced Microelectronic Center Aachen (AMICA), RWTH Aachen University, and Bergische Universität Wuppertal
Integrated internal ion-gated organic electrochemical transistors for stand-alone conformable bioelectronics Columbia University and Columbia University Medical Center
Fault Attacks on Access Control in Processors: Threat, Formal Analysis and Microarchitectural Mitigation University of Kaiserslautern-Landau
Exciton-assisted electron tunnelling in van der Waals heterostructures ETH Zürich, The Barcelona Institute of Science and Technology, Swiss Federal Laboratories for Materials Science and Technology, National Institute for Materials Science, University of Basel, and Institució Catalana de Recerca i Estudis Avançats (ICREA)

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