Finding Defects In IC Packages


Several equipment makers are ramping up new inspection equipment to address the growing defect challenges in IC packaging. At one time, finding defects in packaging was relatively straightforward. But as packaging becomes more complex, and as it is used in markets where reliability is critical, finding defects is both more difficult and more important. This has prompted the development of a ... » read more

Inspecting, Patterning EUV Masks


Semiconductor Engineering sat down to discuss lithography and photomask trends with Bryan Kasprowicz, director of technology and strategy and a distinguished member of the technical staff at Photronics; Thomas Scheruebl, director of strategic business development and product strategy at Zeiss; Noriaki Nakayamada, senior technologist at NuFlare; and Aki Fujimura, chief executive of D2S. What fol... » read more

Challenges Grow For Finding Chip Defects


Several equipment makers are developing or ramping up a new class of wafer inspection systems that address the challenges in finding defects in advanced chips. At each node, the feature sizes of the chips are becoming smaller, while the defects are harder to find. Defects are unwanted deviations in chips, which impact yield and performance. The new inspection systems promise to address the c... » read more

EUV Pellicle, Uptime And Resist Issues Continue


Extreme ultraviolet (EUV) lithography is moving closer to realization, but several problems involving scanner uptime, photoresists and pellicles need to be resolved before this long-overdue technology is put into full production. Intel, Samsung and TSMC are hoping to insert EUV into production at 7nm and/or 5nm. While the remaining issues don’t necessarily pre-empt using EUV, they do affec... » read more

EUV Reticle Print Verification With Advanced Broadband Optical Wafer Inspection And e-Beam Review Systems


As the Extreme Ultraviolet (EUV) lithography ecosystem is being actively mapped out to enable sub-7nm design rule devices, there is an immediate and imperative need to identify the EUV reticle (mask) inspection methodologies. The introduction of additional particle sources due to the vacuum system and potential growth of haze defects or other film or particle depositions on the reticle, in comb... » read more

E-beam Inspection Makes Inroads


E-beam inspection is gaining traction in critical areas in fab production as it is becoming more difficult to find tiny defects with traditional methods at advanced nodes. Applied Materials, ASML/HMI and others are developing new e-beam inspection tools and/or techniques to solve some of the more difficult defect issues in the fab. [gettech id="31057" t_name="E-beam"] inspection is one of tw... » read more

More EUV Mask Gaps


Extreme ultraviolet (EUV) lithography is at a critical juncture. After several delays and glitches, [gettech id="31045" comment="EUV"] is now targeted for 7nm and/or 5nm. But there are still a number of technologies that must come together before EUV is inserted into mass production. And if the pieces don’t fall into place, EUV could slip again. First, the EUV source must generate more ... » read more

E-beam Vs. Optical Inspection


The wafer inspection business is heating up as chipmakers encounter new and tiny killer defects in advanced devices. Last month ASML Holding entered into an agreement to acquire Hermes Microvision (HMI), the world’s largest e-beam inspection vendor, for $3.1 billion. The proposed move propelled ASML into the e-beam wafer inspection market. In addition, [getentity id="22817" e_name="Appl... » read more

Inside Inspection And Metrology


Semiconductor Engineering sat down to talk about inspection, metrology and other issues with Mehdi Vaez-Iravani, vice president of advanced imaging technologies at Applied Materials. What follows are excerpts of that conversation. SE: Today, the industry is working on a new range of complex architectures, such as 3D NAND and finFETs. For these technologies, the industry is clearly struggling... » read more

Finding Defects Is Getting Harder


Chipmakers are plotting out a strategy to scale the transistor to 10nm and beyond. Migrating to these nodes presents a number of challenges, but one issue is starting to gain more attention in the market—killer defects. Defects have always been problematic in the yield ramp for chip designs, but the ability to find them is becoming more difficult and expensive at each node. And it will be... » read more

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